Diotec FT2000AD Superfast silicon rectifiers - single diode / two polarity Datasheet

FT2000AA ... FT2000KG
FT2000AA ... FT2000KG
Superfast Silicon Rectifiers – Single Diode / Two Polarities
Superschnelle Silizium-Gleichrichter – Einzeldiode / Zwei Polaritäten
Version 2007-06-27
Nominal current
Nennstrom
10±0.2
15.7
4
3.4
Type
Typ
1
4
3
3.8
3
1
13.2
4
1.5
0.9
1
20 A
A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...400 V
3
Plastic case
Kunststoffgehäuse
TO-220AC
K
Weight approx.
Gewicht ca.
3
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5.08
Dimensions - Maße [mm]
1.8 g
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Type / Typ
Polarity / Polarität
Grenz- und Kennwerte
Repet. peak reverse voltage Surge peak reverse volt.
Period. Spitzensperrspanng. Stoßspitzensperrspanng.
VRRM [V]
VRSM [V]
K
(Standard)
A
(Reverse)
FT2000KA
FT2000AA
50
FT2000KB
FT2000AB
FT2000KD
FT2000KG
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 20 A
50
< 0.84
< 0.96
100
100
< 0.84
< 0.96
FT2000AD
200
200
< 0.84
< 0.96
FT2000AG
400
400
< 0.84
< 0.96
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
20 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
80 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
375/390 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
680 A2s
VR ≤ 80% VRRM
VR ≤ 20% VRRM
Tj
Tj
-50...+150°C
-50...+200°C
TS
-50...+175°C
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage
bei reduzierter Sperrspannung
Storage temperature – Lagerungstemperatur
1
2
Tj = 25°C
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
FT2000AA ... FT2000KG
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 25 µA
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über trr
IR = 1 A to IR = 0.25 A
< 200 ns
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
120
< 1.5 K/W
103
[%]
[A]
100
Vr < 20% Vrrm
Tj = 125°C
102
80
Tj = 25°C
10
60
Vr < 80% Vrrm
40
1
20
IF
IFAV
0
10-1
0
TC
50
100
150
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses
2
http://www.diotec.com/
400a-(5a-0,8v)
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG
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