MACOM MA4E2508 Surmounttm low and medium & high barrier silicon schottky diodes: anti-parallel pair Datasheet

SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
• Extremely Low Parasitic Capitance and
Inductance
• Surface Mountable in Microwave Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
• Barrier, 100% Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
MA4E2508 Series
V2
The MA4E2508 Family of SurMount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft
substrate circuit with solder.
Case Style 1112
Description and Applications
A
The MA4E2508 SurMount Anti-Parallel Diode Series
are Silicon Low, Medium & High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form
diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss,
microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics
in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
B
C
D
E
D
Inches
Dim
Millimeters
A
Min.
0.0445
Max.
0.0465
Min.
1.130
Max.
1.180
B
0.0169
0.0189
0.430
0.480
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.0148
0.325
0.375
E
0.0128
0.0148
0.325
0.375
The “ 0502 ” outline allows for Surface Mount
placement and multi- functional polarity orientations.
Equivalent Circuit
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Series
V2
Electrical Specifications @ 25 °C
Model
Number
Type
Recommended
Frequency Range
Vf @ 1 mA
( mV )
Ct @ 0 V
( pF )
MA4E2508L
Low
Barrier
DC - 18 GHz
330 Max
300 Typ
0.24 Max
0.18 Typ
Rt Slope Resistance
( Vf1 - Vf2 ) / (10.5mA-9.5mA )
(Ω)
16 Typ
20 Max
MA4E2508M
Medium
Barrier
DC - 18 GHz
470 Max
420 Typ
0.24 Max
0.18 Typ
12 Typ
18 Max
MA4E2508H
High
Barrier
DC - 18 GHz
700 Max
650 Typ
0.24 Max
0.18 Typ
6 Typ
8 Max
Rt is the dynamic slope resistance where Rt = Rs + Rj , where
Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic Resistance.
Max Forward Voltage Difference ∆Vf @ 1 mA: 10 mV
Die Bonding
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
Bulk handling should insure that abrasion and
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted) 1
Parameter
Absolute Maximum
Operating Temperature
-40 °C to +125 °C
Storage Temperature
-40 °C to +150 °C
Junction Temperature
+175 °C
Forward Current
20 mA
Reverse Voltage
5V
RF C.W. Incident Power
+ 20 dBm
RF & DC Dissipated Power
50 mW
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
higher temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37/Ag2 solders
are acceptable for usage.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
1. Operation of this device above any one of these parameters
may cause permanent damage.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Series
V2
MA4E2508L Low Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
26
Rs
(Ω)
12.8
N
1.20
Cj0
( pF )
M
1.0 E-2
0.5
Ik
Cpar
Vj
(mA)
(pF)
(V)
14
9.0 E-2
8.0 E-2
FC
BV
(V)
IBV
(mA)
0.5
5.0
1.0 E-2
FC
BV
(V)
IBV
(mA)
0.5
5.0
1.0 E-2
FC
BV
(V)
IBV
(mA)
0.5
5.0
1.0 E-2
MA4E2508M Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
5 E-1
Rs
N
(Ω)
9.6
1.20
Cj0
( pF )
M
1.0 E-02
0.5
Ik
Cpar
Vj
(mA)
(pF)
(V)
10
9.0 E-2
8.0 E-2
MA4E2508H Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
5.7 E-2
Rs
(Ω)
6.5
N
1.20
Cj0
( pF )
M
1.0 E-02
0.5
Ik
Cpar
Vj
(mA)
(pF)
(V)
4
9.0 E-2
8.0 E-2
* Spice parameters ( PER DIODE ) are based on the MA4E2502 SERIES datasheet.
Circuit Mounting Dimensions (Inches)
0.020
Ordering Information
0.020
0.020
0.020
0.013
Part Number
Package
MA4E2508L-1112W
Wafer on Frame
MA4E2508L-1112
Die in Carrier
MA4E2508L-1112T
Tape/Reel
MA4E2508M-1112W
Wafer on Frame
MA4E2508M-1112
Die in Carrier
MA4E2508M-1112T
Tape/Reel
MA4E2508H-1112W
Wafer on Frame
MA4E2508H-1112
Die in Carrier
MA4E2508H-1112T
Tape/Reel
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Series
V2
MA4E2508 Schematic Per Diode
Ct
Ls
Rs
Rj
Schematic Values per Diode
Model
Number
Ls (nH)
Rs ( Ω )
Rj ( Ω )
Ct ( pF )
MA4E2508L
0.8
12.8
26 / Idc
0.09
MA4E2508M
0.8
9.6
26 / Idc
0.09
MA4E2508H
0.8
6.5
26 / Idc
0.09
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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