SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT491A ISSUE 1 - FEBRUARY 1999 PARTMARKING DETAIL – FZT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A 200 mA Base Current IB Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO TYP. MAX. UNIT CONDITIONS. 40 V IC=100µA 40 V IC=10mA* 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=30V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Cut-Off ICES Current 100 nA VCES=30V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.5 V V IC=500mA, IB =50mA* IC=1A, IB =100mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =1A, VCE =5V* Static Forward Current hFE Transition Frequency fT Output Capacitance Cobo 300 300 200 35 IC=1mA, VCE =5V IC =500mA, VCE =5V* IC =1A, VCE =5V* IC = 2A, VCE =5V* 900 150 10 *Measured under pulsed conditions. Pulse width=300µs. For typical characteristics graphs see FMMT491A datasheet MHz IC=50mA, VCE=10V, f =100MHz pF VCB=10V, f=1MHz