SDM03MT40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODELS: SDM03MT40 NEW PRODUCT Features · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-26 A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F 0.55 B C TOP VIEW Mechanical Data · · · · · · · · H Case: SOT-26, Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Leads: Solderable per MIL-STD-202, Method 208 Marking: Marking Code & Date Code (See Page 3) Marking Code: KSR Weight: 0.016 grams (approx.) Maximum Ratings K M J F D ¾ ¾ H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L L 0.35 0.55 0.40 M 0.10 0.20 0.15 a 0° 8° ¾ All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VRRM VRWM VR 40 V VR(RMS) 28 V Forward Continuous Current (Note 2) IFM 30 mA Non-Repetitive Peak Forward Surge Current @8.3ms Single half sine-wave superimposed on rated load (JEDEDC method) IFSM 200 mA Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Pd 225 mW Thermal Resistance, Junction to Ambient Air RqJA 444 °C/W Operating and Storage Temperature Range Tj, TSTG -40 to +125 °C Power Dissipation (Note 2) Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition V(BR)R 40 ¾ ¾ V IR = 10uA Forward Voltage Drop (Note 1) VF ¾ ¾ 370 mV IF = 1mA Leakage Current (Note 1) IR ¾ ¾ 1 mA VR = 10V Total Capacitance CT ¾ 2 ¾ pF VR = 1V f = 1.0 MHz Reverse Breakdown Voltage (Note 1) Notes: 1. Short duration test pulse to minimize self-heating effect. 2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30372 Rev. 2 - 2 1 of 3 www.diodes.com SDM03MT40 ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) PD, POWER DISSIPATION (mW) 225 150 75 0 0 25 75 50 100 1 100m TA = +125ºC 1m TA = +25ºC 0 125 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 f = 1MHz TA = +125ºC CT, TOTAL CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (A) TA = +75ºC 10m TA, AMBIENT TEMPERATURE (°C) Fig. 1 Derating Curve TA = 75ºC 100n TA = 25ºC 10n 10 1 TA = -25ºC 1n 0.1 0 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. DC Voltage 10 trr, REVERSE RECOVERY TIME (ns) NEW PRODUCT 300 5 2 1 0.5 0.2 0.1 0 4 8 12 16 20 24 28 IF, FORWARD CURRENT (mA) Fig. 5 Typical Reverse Recovery Time Characteristics DS30372 Rev. 2 - 2 2 of 3 www.diodes.com SDM03MT40 (Note 3) Device Packaging Shipping SDM03MT40-7 SOT-26 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KSR = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT Ordering Information KSR Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30372 Rev. 2 - 2 3 of 3 www.diodes.com SDM03MT40