ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device. FEATURES SOT23-6 • Low Equivalent On Resistance • Low Saturation Voltage • IC=1A Continuous Collector Current • SOT23-6 package C1 C2 B1 APPLICATIONS • LCD Backlighting inverter circuits • Boost functions in DC-DC converters B2 E1 E2 • ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXTD09N50DE6TA 7 8mm embossed 3000 units ZXTD09N50DE6TC 13 8mm embossed 10000 units DEVICE MARKING D619 C1 E1 C2 Top View ISSUE 2 - JUNE 2001 1 B1 E2 B2 ZXTD09N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1.0 A Base Current IB 200 mA Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 0.90 7.2 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 139 °C/W Junction to Ambient (b)(d) R θJA 73 °C/W Junction to Ambient (a)(e) R θJA 113 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 2 - JUNE 2001 2 ZXTD09N50DE6 E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown V (BR)EBO Voltage TYP. MAX. UNIT CONDITIONS. 50 V I C = 100µA 50 V I C = 10mA* 5 V I E = 100µA Collector Cut-Off Current I CBO 10 nA V CB = 40V Emitter Cut-Off Current I EBO 10 nA V EB = 4V Collector Emitter Cut-Off I CES Current 10 nA V CES = 40V Collector-Emitter Saturation Voltage V CE(sat) 24 60 120 160 35 80 200 270 mV mV mV mV IC= IC= IC= IC= Base-Emitter Saturation Voltage V BE(sat) 940 1100 mV I C = 1A, I B = 50mA* Base-Emitter Turn-On Voltage V BE(on) 850 1100 mV I C = 1A, V CE = 2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 215 MHz I C = 50mA, V CE =10V f= 100MHz Output Capacitance C obo 10 pF V CB = 10V, f=1MHz Turn-On Time t (on) 150 ns Turn-Off Time t (off) 425 ns V CC =10 V, I C = 1A I B1 =I B2 =100mA 200 300 200 75 20 I C =10mA, V CE = 2V* I C = 100mA, V CE =2 V* I C = 500mA, V CE =2V* I C = 1A, V CE = 2V* I C = 1.5A, V CE =2 V* 420 450 350 130 60 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JUNE 2001 3 100mA, I B = 10mA* 250mA, I B = 10mA* 500mA, I B = 10mA* 1A, I B = 50mA* ZXTD09N50DE6 TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0.1 0 -55°C +25°C +100°C +150°C 0.2 1m 10m 100m 1 0 10 10m 1m IC - Collector Current (A) VCE(sat) v IC 1.0 VCE=2V +100°C 400 +25°C -55°C 200 10 IC/IB=50 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 10m 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 10 IC - Collector Current (A) 1.15 0.9 VBE(on) - (V) 1 0.8 600 VBE(sat) - (V) hFE - Typical Gain 800 100m IC - Collector Current (A) VCE(sat) v IC 0.6 -55°C +25°C +100°C +150°C 0.3 0 1m 10m 100m 1 10 IC - Collector Current (A) VBE(on) v IC 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area ISSUE 2 - JUNE 2001 4 ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 5 ZXTD09N50DE6 ISSUE 2 - JUNE 2001 6 ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 7 ZXTD09N50DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. Suite 315 700 Veterans Memorial Highway Hauppauge NY11788 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 2001 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - JUNE 2001 8