Fairchild MTP3055V N-channel enhancement mode field effect transistor Datasheet

MTP3055V
N-Channel Enhancement Mode Field Effect Transistor
Features
General Description
• 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V
This N-Channel MOSFET has been designed specifically
for low voltage, high speed switching applications i.e.
power supplies and power motor controls.
• Critical DC electrical parameters specified at elevated
temperature.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
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1999 Fairchild Semiconductor Corporation
MTP3055V Rev. A
MTP3055V
May 1999
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Notes:
1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
MTP3055V Rev. A
MTP3055V
(OHFWULFDO&KDUDFWHULVWLFV
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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CROSSVOLT™
DenseTrench™
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SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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TinyLogic™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
No Identification Needed
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The datasheet is printed for reference information only.
Rev. H5
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