BRIGHT BIR-BO13J4G End-look package light emitting diode Datasheet

BRIGHT LED ELECTRONICS CORP.
BIR-BO13J4G
SINCE 1981
END-LOOK PACKAGE
LIGHT EMITTING DIODE
z
Package Dimensions:
5.0(.197)
z Features:
1. High radiant power and high radiant intensity.
2. Standard T-1 3/4(5mm)package.
8.62(.339)
1.0(.039)
3. Peak wavelength λp=850nm.
4. Good spectral matching to si-photodetector.
1.5(.059)
5. Radiant angle: 20°
MAX.
6. Lens Appearance: Water Clear.
5.7(.224)
23.4(.921) MIN.
0.5(.020) SQ.TYP.
Anode
Cathode
7. This product doesn't contain restriction
substance, comply ROHS standard
2.54(.100)
1.00(.039)
MIN.
NOM.
z
NOTES:
Applications:
1. Remote Control.
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
2. Automatic Control System.
z Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
Power Dissipation
Pd
100
mW
Continuous Forward Current
IF
100
mA
IFP
1.0
A
VR
5
V
Operating Temperature
Topr
-45℃~85℃
-
Storage Temperature
Tstg
-45℃~100℃
-
Soldering Temperature
Tsol
260℃(for 5 seconds)
-
Peak Forward Current
*1
Reverse Voltage
*1
Condition for is IFP pulse of 1/10 duty and 0.1 msec width.
Rev:2.1
Page1
Page1
of of
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BRIGHT LED ELECTRONICS CORP.
BIR-BO13J4G
SINCE 1981
z
Optical- Electrical Characteristics (@TA=25℃)
Parameter
Symbol
Test Conditions
Min
TYP
Max
Unit
Radiant Intensity
Ie
IF=50mA
45.31
128.5
-
mW/sr
Forward Voltage
VF
IF=50mA
-
1.5
1.8
V
Reverse Current
IR
VR=5V
-
-
10
µA
Peak Wavelength
λp
IF=20mA
-
850
-
nm
Spectral Line Half- Width
∆λ
IF=20mA
-
50
-
nm
Viewing Angle
2θ1/2
IF=20mA
-
20
-
deg
z Typical Optical-Electrical Characteristic Curves
Fig.2 Forward Current Vs
Ambient Temperature
Fig.1 Spectral Dlstrbution
120
Forward Current IF (mA)
Relative Radiant Intensity
1.0
0.5
0
750
100
80
20
0
-40
Output Power To Value @50mA
80
60
40
20
1.0
2.0
0
20
40
60
80
100
Fig.4 Relative Radiant Intensity
Vs Ambient Tembeb Ature
Fig.3 Forward Current Vs
0
-20
Ambient Temperature
(nm)
(mA)
100
Forward Current
40
950
850
Wavelength
0
60
3.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
(V)
Forward Voltage
-20
0
20
40
60
Ambient Temperature
Fig.5 Relative Radiant Intensity
Vs Forward Current
(°C)
Fig.6 Radiation Diagram
0
10
20
4.0
Relative Radiant Intensity
Output Power Relative To
Value At @ 50mA
30
3.0
2.0
1.0
0
0
20
40
60
Forward Current
80
100
1.0
40
0.9
50
0.8
60
70
0.7
80
90
0.5
0.3
0.1
0.2
0.4
0.6
(mA)
Rev:2.1
Page2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BIR-BO13J4G
z Tapping and packaging specifications(Units: mm)
z Packaging Bag Dimensions
Notes:
1、500pcs per bag, 5Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.1
Page3 of 3
BRIGHT LED ELECTRONICS CORP.
BIR-BO13J4G
SINCE 1981
Infrared Emitting Diode Specification
Commodity: Infrared emitting diode
Intensity Bin Limits (At 50mA)
BIN CODE
Min.(mW/sr)
Max.( (mW/sr)
15
32.36
61.30
16
45.31
85.82
17
63.43
120.15
18
88.80
168.21
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