TI LM108AWG/883 Lm108/lm108aqml operational amplifier Datasheet

LM108,LM108AQML
LM108/LM108AQML Operational Amplifiers
Literature Number: SNOSAH4A
LM108/LM108AQML
Operational Amplifiers
General Description
The LM108 is a precision operational amplifier having specifications a factor of ten better than FET amplifiers over a
−55˚C to +125˚C temperature range.
The devices operate with supply voltages from ± 2V to ± 20V
and have sufficient supply rejection to use unregulated supplies. Although the circuit is interchangeable with, and uses
the same compensation as the LM101A, an alternate compensation scheme can be used to make it particularly insensitive to power supply noise and to make supply bypass
capacitors unnecessary.
fact, it operates from 10 MΩ source resistances, introducing
less error than devices like the 709 with 10 kΩ sources.
Integrators with drifts less than 500 µV/sec and analog time
delays in excess of one hour can be made using capacitors
no larger than 1 µF.
Features
n
n
n
n
Maximum input bias current of 3.0 nA over temperature
Offset current less than 400 pA over temperature
Supply current of only 300 µA, even in saturation
Guaranteed drift characteristics
The low current error of the LM108 makes possible many
designs that are not practical with conventional amplifiers. In
Ordering Information
NS PART NUMBER
SMD PART NUMBER
NS PACKAGE NUMBER
PACKAGE DISCRIPTION
LM108AH/883
H08C
8LD Metal Can
LM108AJ-8/883
J08A
8LD CERDIP
LM108AJ/883
J14A
14LD CERDIP
LM108AWG/883
WG10A
10LD Ceramic SOIC
LM108AHRQML
5962R9863702QGA
100k rd(Si)
H08C
8LD Metal Can
LM108AHRQMLV
5962R9863702VGA
100k rd(Si)
H08C
8LD Metal Can
LM108AJ-8RQMLV
5962R9863702VPA
100k rd(Si)
J08A
8LD CERDIP
LM108AJRQML
5962R9863702QCA
100k rd(Si)
J14A
14LD CERDIP
LM108AJRQMLV
5962R9863702VCA
100k rd(Si)
J14A
14LD CERDIP
LM108AWGRQML
5962R9863702QZA
100k rd(Si)
WG10A
10LD Ceramic SOIC
LM108AWGRQMLV
5962R9863702VZA
100k rd(Si)
WG10A
10LD Ceramic SOIC
LM108AWRQML
5962R9863702QHA
100k rd(Si)
W10A
10LD CERPACK
LM108AWRQMLV
5962R9863702VHA
100k rd(Si)
W10A
10LD CERPACK
H08C
8LD Metal Can
LM108J/883
J14A
14LD CERDIP
LM108J-8/883
J08A
8LD CERDIP
LM108H/883
© 2005 National Semiconductor Corporation
DS201206
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LM108/LM108AQML Operational Amplifiers
December 2005
LM108/LM108AQML
Connection Diagrams
Metal Can Package
14 Lead Dual-In-Line Package
20120616
20120613
Top View
See NS Package Number J14A
*Package is connected to Pin 4 (V−)
**Unused pin (no internal connection) to allow for input anti-leakage guard
ring on printed circuit board layout.
See NS Package Number H08C
8 Lead Dual-In-Line Package
10 Lead Flatpack/SOIC Package
20120617
Top View
See NS Package Number W10A, WG10A
20120615
Top View
See NS Package Number J08A
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2
LM108/LM108AQML
Schematic Diagram
20120608
3
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LM108/LM108AQML
Compensation Circuits
Alternate Frequency Compensation
(Note 1)
Standard Compensation Circuit
20120601
20120602
**Bandwidth and slew rate are proportional to 1/CS
CO = 30 pF
**Bandwidth and slew rate are proportional to 1/Cf
Note 1: Improves rejection of power supply noise by a factor of ten.
Feedforward Compensation
20120603
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4
Supply Voltage
LM108RH
LM108/LM108A
± 22V
± 20V
Power Dissipation (Note 4)
Metal Can
330mW @ +125˚C
8 LD
CERDIP
14LD
400mW @ +125˚C
CERDIP
8LD
400mW @ +125˚C
CERPACK
330mW @ +125˚C
10LD
Ceramic SOIC
330mW @ +125˚C
10 LD
± 10 mA
± 30V
± 20V
Differential Input Current (Note 5)
Differential Input Voltage(Note 7)
Input Voltage (Note 6)
Output Short-Circuit Duration
Continuous
Operating Temperature Range
−55˚C ≤ TA ≤ +125˚C
Storage Temperature Range
−65˚C ≤ TA ≤ +150˚C
N/A
± 15V
Thermal Resistance
θJA
Metal Can 8 LD
Still Air
500LF / Min Air Flow
150˚C/W
86˚C/W
CERDIP 14LD Still Air
500LF / Min Air Flow
94˚C/W
55˚C/W
CERDIP 8LD Still Air
500LF / Min Air Flow
120˚C/W
68˚C/W
CERPACK 10LD Still Air
500LF / Min Air Flow
225˚C/W
142˚C/W
Ceramic SOIC
10 LD
Still Air
500LF / Min Air Flow
225˚C/W
142˚C/W
θJC
Metal Can
8 LD
38˚C/W
CERDIP
14LD
13˚C/W
CERDIP
8LD
17˚C/W
CERPACK
10LD
Ceramic SOIC
21˚C/W
10 LD
21˚C/W
Package Weight (typical)
Metal Can
8 LD
990mg
CERDIP
14LD
2,180mg
CERDIP
8LD
1,090mg
CERPACK
10LD
Ceramic SOIC
225mg
10 LD
210mg
Maximum Junction Teperature
175˚C
Lead Temperature (Soldering, 10 sec)
300˚C
ESD Tolerance (Note 8)
2000V
5
150˚C
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LM108/LM108AQML
Absolute Maximum Ratings (Notes 2, 3)
LM108/LM108AQML
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Temp (˚C)
1
Static tests at
+25˚C
2
Static tests at
+125˚C
3
Static tests at
−55˚C
4
Dynamic tests at
+25˚C
5
Dynamic tests at
+125˚C
6
Dynamic tests at
−55˚C
7
Functional tests at
+25˚C
8A
Functional tests at
+125˚C
8B
Functional tests at
−55˚C
9
Switching tests at
+25˚C
10
Switching tests at
+125˚C
11
Switching tests at
−55˚C
LM108 Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V
Symbol
VIO
Parameter
Input Offset Voltage
Conditions
VCM = -15V
VCM = 15V
VCC = ± 5V
IIO
Input Offset Current
VCM = -15V
VCM = 15V
VCC = ± 5V
± IIB
Input Bias Current
VCM = -15V
VCM = 15V
VCC = ± 5V
PSRR
Power Supply Rejection ± Ratio ± 20V < = Vcc < = ± 5V
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6
Notes
Min
Max
Subgroups
Units
-2.0
2.0
mV
1
-3.0
3.0
mV
2, 3
-2.0
2.0
mV
1
-3.0
3.0
mV
2, 3
-2.0
2.0
mV
1
-3.0
3.0
mV
2, 3
-2.0
2,0
mV
1
-3.0
3.0
mV
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.1
2.0
nA
1
-1.0
3.0
nA
2,
−0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2,
−0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2,
−0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2,
−0.1
3.0
nA
3
dB
1, 2, 3
80
(Continued)
DC Parameters
(Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V
Symbol
Parameter
Conditions
Notes
Min
Max
Subgroups
Units
CMRR
Common Mode Rejection Ratio -15V < = VCM < = 15V
+IOS
Short Circuit Current
VCC = ± 15V
-30
-1.0
mA
1, 2, 3
-IOS
Short Circuit Current
VCC = ± 15V
1
30
mA
1, 2, 3
ICC
Power Supply Current
0.6
mA
1
0.4
mA
2
0.8
mA
3
RIN
Input Resistance
VIN
Input Voltage Range
VCC = ± 15V
85
dB
1, 2, 3
(Note 13)
30
MΩ
1
(Note 12)
14
V
1, 2
V
1, 2
(Note 12)
(Note 12)
−14
13.5
(Note 12)
(Note 12)
V
3
−13.5 V
3
15
(Note 12)
V
−15
1, 2, 3
V
1, 2, 3
V
4, 5, 6
+VOP
Output Voltage Swing
VCC = ± 15V, RL = 10KΩ
-VOP
Output Voltage Swing
VCC = ± 15V, RL = 10KΩ
V
4, 5, 6
+AVS
Open Loop Voltage Gain
VCC = ± 15V, RL = 10KΩ,
Vout = 0 to 10V
(Note 10)
50
V/mV
4
(Note 10)
25
V/mV
5, 6
VCC = ± 15V, RL = 10KΩ
Vout = 0 to -10V
(Note 10)
50
V/mV
4
(Note 10)
25
V/mV
5, 6
-AVS
Open Loop Voltage Gain
13
-13
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Subgroups
TRTR
Rise Time
(Note 13)
1.0
µS
7
TROS
Overshoot
(Note 13)
30
%
7
7
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LM108/LM108AQML
LM108 Electrical Characteristics
LM108/LM108AQML
LM108A Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V
Symbol
VIO
Parameter
Input Offset Voltage
Conditions
Notes
VCM = -15V
Input Offset Current
0.5
mV
1
1.0
mV
2, 3
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
VCC = ± 5V
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
VCM = -15V
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
VCC = ± 5V
Input Bias Current
VCM = -15V
VCM = 15V
VCC = ± 5V
± 20V < = VCC < = ± 5V
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.1
2.0
nA
1
-1.0
3.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
3.0
nA
2
-0.1
3.0
nA
3
PSRR
Power Supply Rejection Ratio
CMRR
Common Mode Rejection Ratio -15V < = VCM < = 15V
+IOS
Short Circuit Current
VCC = ± 15V
-30
-IOS
Short Circuit Current
= ± 15V
1.0
ICC
Power Supply Current
RIN
Input Resistance
VIN
Input Voltage Range
VCC
VCC = ± 15V
96
dB
1, 2, 3
96
dB
1, 2, 3
mA
1, 2, 3
1, 2, 3
1
0.4
mA
2
0.8
mA
3
30
MΩ
1
V
1, 2
V
1, 2
(Note 12)
8
mA
mA
14
−14
13.5
(Note 12)
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30
0.6
(Note 13)
(Note 12)
Temperature Coefficient of
Input Offset Voltage
-1.0
(Note 12)
(Note 12)
Delta VIO /
Delta T
Subgroups
Units
-0.5
VCM = 15V
± IIB
Max
-1.0
VCM = 15V
IIO
Min
V
3
−13.5 V
3
15
V
1, 2, 3
(Note 12)
−15
V
1, 2, 3
(Note 13)
5.0
µV/˚C
1, 2, 3
(Continued)
DC Parameters
(Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V
Symbol
Parameter
Delta I IO/
Delta T
Temperature Coefficient of
Input Offset Current
Conditions
Notes
Min
(Note 13)
Max
Subgroups
Units
2.5
pA/˚C
1, 2, 3
V
4, 5, 6
-13
V
4, 5, 6
+VOP
Output Voltage Swing
VCC = ± 15V, RL = 10KΩ
-VOP
Output Voltage Swing
VCC = ± 15V, RL = 10KΩ
+AVS
Open Loop Voltage Gain
VCC = ± 15V, RL = 10KΩ,
Vout = 0 to 10V
(Note 10)
80
V/mV
4
(Note 10)
40
V/mV
5, 6
-AVS
Open Loop Voltage Gain
VCC = ± 15V, RL = 10KΩ,
Vout = 0 to -10V
(Note 10)
80
V/mV
4
(Note 10)
40
V/mV
5, 6
13
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC = ± 20V, VCM = 0V
Symbol
TRTR
Parameter
Conditions
Transient Response Rise Time
Notes
(Note 13)
9
Min
Max
1.0
Subgroups
Units
µS
7
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LM108/LM108AQML
LM108A Electrical Characteristics
LM108/LM108AQML
LM108A Rad Hard — Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Symbol
VIO
Parameter
Input Offset Voltage
Conditions
Notes
Subgroups
Min
Max
+VCC = 35V, -VCC = -5V,
VCM = -15V
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
+VCC = 5V, -VCC = -35V,
VCM = 15V
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
-0.5
0.5
mV
1
-1.0
1.0
mV
2, 3
-0.5
0.5
mV
1
+VCC = +5V, -VCC = -5V
Units
-1.0
1.0
mV
2, 3
Delta VIO /
Delta T
Temperature Coefficient of
Input Offset Voltage
25˚C ≤ TA ≤ +125˚C
(Note 9)
-5.0
5.0
µV/˚C
2
-55˚C ≤ TA ≤ 25˚C
(Note 9)
-5.0
5.0
µV/˚C
3
IIO
Input Offset Current
+VCC = 35V, -VCC = -5V,
VCM = -15V
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
+VCC = 5V, -VCC = -35V,
VCM = 15V
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
-0.2
0.2
nA
1
-0.4
0.4
nA
2, 3
+VCC = +5V, -VCC = -5V
Delta I IO/
Delta T
Temperature Coefficient of
Input Offset Current
± IIB
Input Bias Current
25˚C ≤ TA ≤ +125˚C
(Note 9)
-2.5
2.5
pA/˚C
2
-55˚C ≤ TA ≤ 25˚C
(Note 9)
-2.5
2.5
pA/˚C
3
-0.1
2.0
nA
1
-1.0
2.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
2.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
2.0
nA
2
-0.1
3.0
nA
3
-0.1
2.0
nA
1
-1.0
2.0
nA
2
+VCC = 35V, -VCC = -5V,
VCM = -15V
+VCC = 5V, -VCC = -35V,
VCM = 15V
+VCC = +5V, -VCC = -5V
-0.1
3.0
nA
3
+PSRR
Power Supply Rejection Ratio
+VCC = 10V, -VCC = -20V
-16
16
µV/V
1, 2, 3
-PSRR
Power Supply Rejection Ratio
+VCC = 20V, -VCC = -10V
-16
16
CMRR
Common Mode Rejection Ratio VCM = ± 15V
+IOS
Short Circuit Current
+VCC = +15V,
-VCC = -15V, t ≤ 25mS
-IOS
Short Circuit Current
+VCC = +15V,
-VCC = -15V, t ≤ 25mS
ICC
Power Supply Current
+VCC = +15V,
-VCC = -15V
+VOP
Output Voltage Swing
RL = 10KΩ
-VOP
Output Voltage Swing
RL = 10KΩ
+AVS
Open Loop Voltage Gain
RL = 10KΩ, Vout = +15V
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µV/V
1, 2, 3
96
dB
1, 2, 3
-20
mA
1, 2, 3
20
mA
1, 2, 3
0.6
mA
1, 2
0.8
16
-16
10
mA
3
V
4, 5, 6
V
4, 5, 6
(Note 10)
80
V/mV
4
(Note 10)
40
V/mV
5, 6
(Continued)
DC Parameters
(Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Symbol
Parameter
Conditions
-AVS
Open Loop Voltage Gain
RL = 10KΩ, Vout = -15V
AVS
Open Loop Voltage Gain
± VCC = ± 5V, RL = 10KΩ,
Vout = ± 2V
Notes
Min
Max
Subgroups
Units
(Note 10)
80
V/mV
4
(Note 10)
40
V/mV
5, 6
(Note 10)
20
V/mV
4, 5, 6
Units
Subgroups
DC Drift Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 only.
Symbol
Parameter
Conditions
Notes
Min
Max
VIO
Input Offset Voltage
-0.25
0.25 mV
1
± IIB
Input Bias Current
-0.5
0.5
1
Min
Max
nA
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
AC
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Symbol
Parameter
Conditions
Notes
RL = 10KΩ, CL = 100pF,
f < 1KHz, Vin = +50mV
TRTR
Transient Response Rise Time
TROS
Transient Response Overshoot
RL = 10KΩ, CL = 100pF,
f < 1KHz, Vin = +50mV
+SR
Slew Rate
AV = 1,
VIN = -5V to +5V
−SR
Slew Rate
AV = 1,
VIN = +5V to -5V
1,000 nS
50
Subgroups
Units
9, 10, 11
%
9, 10, 11
0.05
V/µS
9, 10, 11
0.05
V/µS
9, 10, 11
NIBB
Noise Broadband
BW = 10Hz to 5KHz,
RS = 0 Ω
15
µVRMS
9
NIPC
Noise Popcorn
BW = 10Hz to 5KHz,
RS= 100KΩ
40
µVPK
9
Post Radiation Parameters @ +25˚C
(Note 11)
The following conditions apply to all the following parameters, unless otherwise specified.
DC:
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Symbol
± IIB
Parameter
Input Bias Current
Conditions
Notes
Min
Max
Subgroups
Units
+VCC = 35V, -VCC = -5V,
VCM = -15V
(Note 11)
5.0
nA
1
+VCC = 5V, -VCC = -35V,
VCM = -15V
(Note 11)
5.0
nA
1
(Note 11)
5.0
nA
1
(Note 11)
5.0
nA
1
+VCC = +5V, -VCC = -5V
11
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LM108/LM108AQML
LM108A Rad Hard — Electrical Characteristics
LM108/LM108AQML
LM108A Rad Hard — Electrical Characteristics
(Continued)
Post Radiation Parameters @ +25˚C
(Note 11) (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
DC:
± VCC = ± 20V, VCM = 0V, RS = 50Ω
Symbol
IIO
Parameter
Input Offset Current
Conditions
+VCC = 35V, -VCC = -5V,
VCM = -15V
+VCC = 5V, -VCC = -35V,
VCM = -15V
+VCC = +5V, -VCC = -5V
Notes
(Note 11)
Min
Max
0.5
Subgroups
Units
nA
1
(Note 11)
0.5
nA
1
(Note 11)
0.5
nA
1
(Note 11)
0.5
nA
1
Note 2: Parameters have only been entered in the LM108 / LM108A column if different from LM108RH
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA) /θJA
or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 5: The inputs are shunted with back-to-back diodes for over voltage protection. Therefore, excessive current will flow if a differential input voltage in excess
of 1V is applied between the inputs unless some limiting resistance is used.
Note 6: For supply voltages less than ± 20V, the absolute maximum input voltage is equal to the supply voltage.
Note 7: This rating is ± 1.0V unless resistances of 2K Ohms or greater are inserted in series with the inputs to limit current in the input shunt diodes to the maximum
allowable value..
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Note 9: Calculated parameter
Note 10: Datalog reading in K = V/mV
Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5.
Note 12: Parameter tested Go-No-Go
Note 13: Guaranteed parameter not tested.
Note 14: Calculated parameter for Class “S” only
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12
LM108/LM108AQML
Typical Performance Characteristics
Input Currents
Offset Error
20120618
20120619
Drift Error
Input Noise Voltage
20120620
20120621
Closed Loop
Output Impedance
Power Supply Rejection
20120623
20120622
Voltage Gain
Output Swing
20120624
20120625
13
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LM108/LM108AQML
Typical Performance Characteristics
(Continued)
Open Loop
Frequency Response
Supply Current
20120626
20120627
Large Signal
Frequency Response
Voltage Follower
Pulse Response
20120628
www.national.com
20120629
14
LM108/LM108AQML
Typical Applications
Sample and Hold
20120604
†Teflon polyethylene or polycarbonate dielectric capacitor
Worst case drift less than 2.5 mV/sec
High Speed Amplifier with Low Drift and Low Input Current
20120605
15
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LM108/LM108AQML
Typical Applications
(Continued)
Fast Summing Amplifier (Note 15)
20120612
*In addition to increasing speed, the LM101A raises high and low frequency gain, increases output drive capability and eliminates thermal feedback.
Note 15: Power Bandwidth: 250 KHz
Small Signal Bandwidth: 3.5 MHz
Slew Rate: 10V/µS
www.national.com
16
Date
Released
Revision
Section
Originator
Changes
03/23/05
A
New release, corporate format.
L. Lytle
Ordering information table, Electrical
sections for the LM108 and
LM108A.
3 MDS data sheets converted into one
Corp. datasheet format. MRLM108A-X-RH
rev. 1A0, MNLM108A-X rev 1A1,
MNLM108–X rev 0BL. Deleted following:
NSID LM108AW/883 and
LM108AJ-8RQML, no longer offered; from
LM108 electrical’s Delta VIO/Delta T, Delta
IIO/Delta T, Drift Parameters; from
LM108A electrical’s Drift Parameters.
Reason: referenced products are 883
only.
12/14/05
B
Rad Hard Electricals, DC
Parameters
+IOS from -15 mA min to -20 mA min and
-IOS from +15 mA max to +20 mA max.
Reason: To reflect SMD update. Revision
A will be archived.
R. Malone
17
www.national.com
LM108/LM108AQML
Revision History
LM108/LM108AQML
Physical Dimensions
inches (millimeters) unless otherwise noted
Ceramic Dual-In-Line Package (J)
NS Package Number J08A
Ceramic Dual-In-Line Package (J)
NS Package Number J14A
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18
LM108/LM108AQML
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Metal Can Package (H)
NS Package Number H08C
S.O. Package (WG)
NS Package Number WG10A
19
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LM108/LM108AQML Operational Amplifiers
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Ceramic Flatpack Package (W)
NS Package Number W10A
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