SeCoS MMBT2222A General purpose transistor Datasheet

MMBT2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
COLLECTOR
Epitaxial Planar Die Construction
3
3
3
Complementary PNP Type Available
(MMBT2907A)
Top View
1
Ideal for Medium Power Amplification and
Switching
1
B S
1
2
2
BASE
V
G
2
EMITTER
C
H
D
J
K
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Symbol
2222
2222A
Unit
VCEO
30
40
Vdc
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
Collector – Base Voltage
VCBO
60
75
Vdc
Emitter – Base Voltage
VEBO
5.0
6.0
Vdc
Collector Current — Continuous
SOT-23
IC
600
mAdc
Symbol
Max
Unit
PD
225
mW
J
0.085
0.177
1.8
mW/°C
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
All Dimension in mm
DEVICE MARKING
MMBT2222 = M1B; MMBT2222A = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
—
—
Vdc
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
—
—
Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
—
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
—
10
nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
ICBO
—
—
—
—
0.01
0.01
10
10
µAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A
IEBO
—
100
nAdc
MMBT2222A
IBL
—
20
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR±5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
REM : Thermal Clad is a trademark of the Bergquist Company.
Any changing of specification will not be informed individual
Page 1 of 5
MMBT2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
35
50
75
35
100
50
30
40
—
—
—
—
300
—
—
—
MMBT2222
MMBT2222A
—
—
0.4
0.3
MMBT2222
MMBT2222A
—
—
1.6
1.0
MMBT2222
MMBT2222A
—
0.6
1.3
1.2
MMBT2222
MMBT2222A
—
—
2.6
2.0
250
300
—
—
—
8.0
—
—
30
25
2.0
0.25
8.0
1.25
—
—
8.0
4.0
50
75
300
375
5.0
25
35
200
—
150
—
4.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
hFE
MMBT2222A only
MMBT2222
MMBT2222A
Collector – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
—
VCE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
Vdc
VBE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
pF
Cibo
MMBT2222
MMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
MMBT2222A
pF
hie
kΩ
X 10– 4
hre
hfe
—
mmhos
hoe
rb, Cc
ps
NF
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
v
((VCC = 30 Vdc,, VBE(off) = – 0.5 Vdc,,
IC = 150 mAdc, IB1 = 15 mAdc)
td
—
10
tr
—
25
((VCC = 30 Vdc,, IC = 150 mAdc,,
IB1 = IB2 = 15 mAdc)
ts
—
225
tf
—
60
v
ns
ns
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
MMBT2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
1.0 to 100 µs,
Duty Cycle ≈ 2.0%
+16 V
0
–2 V
200
1.0 to 100 µs,
Duty Cycle ≈ 2.0%
+16 V
200
0
1 kΩ
CS* < 10 pF
< 2 ns
1k
–14 V
< 20 ns
CS* < 10 pF
1N914
–4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
500
hFE , DC Current Gain
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70
100
200
5.0
10
300
500 700 1.0 k
Figure 3. DC Current Gain
VCE , Collector–Emitter Voltage (V)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I B, Base Current (mA)
2.0
3.0
20
30
50
Figure 4. Collector Saturation Region
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 5
MMBT2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts – 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
I C, Collector Current (mA)
200 300
500
5.0 7.0 10
20
Figure 5. Turn – On Time
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
300
500
6.0
f = 1.0 kHz
8.0
NF, Noise Figure (dB)
NF, Noise Figure (dB)
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 µA
100 µA
500 µA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, Frequency (kHz)
RS, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
f T, Current–Gain Bandwidth Products (MHz)
500
20
Ceb
Capacitance (pF)
200
10
8.0
10
7.0
5.0
Ccb
3.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
Reverse Voltage (V)
Figure 9. Capacitances
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01-Jun-2002 Rev. A
30
50 70 100
I C, Collector Current (mA)
Figure 6. Turn – Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, Time (ns)
t, Time (ns)
100
70
50
20 30
50
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20
IC, Collector Current (mA)
30
50
70 100
Figure 10. Current–Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 4 of 5
MMBT2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
1.0
+0.5
TJ = 25°C
0
0.8
Coefficient (mV/ °C)
V, Voltage (V)
VBE(sat) @ IC/IB = 10
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
– 0.5
– 1.0
– 1.5
RqVB for VBE
– 2.0
VCE(sat) @ IC/IB = 10
0
– 2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
I C, Collect Current (mA)
Figure 11. “On” Voltages
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
I C, Collect Current (mA)
500
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page 5 of 5
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