Central CP592V Small signal transistors pnp - amp/switch transistor chip Datasheet

PROCESS
CP592V
Small Signal Transistors
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
12 x 20 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
3.6 X 3.6 MILS
Emitter Bonding Pad Area
3.6 X 3.6 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER
47,150
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
2N3906
CMKT3906
CMLT3906E
CMPT3906
CMST3906
CXT3906
CZT3906
R0 (13- February 2006)
PROCESS
CP592V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (13- February 2006)
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