MCC MMBTA42 Npn silicon high voltage transistor Datasheet

MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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MMBTA42
Features
•
•
Halogen free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 300mWatts of Power Dissipation
Continuous Collector Current : 300mA
Peak Collector Current : 500mA
Marking:1D
•
•
•
•
•
•
NPN Silicon High
Voltage Transistor
SOT-23
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
A
Units
D
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
C
Collector-Emitter Breakdown Voltage*
(I C=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100µAdc, IC=0)
Collector Cutoff Current
(VCB=200Vdc, IE=0)
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
300
Vdc
300
Vdc
6.0
Vdc
0.1
uAdc
0.1
uAdc
C
F
B
B
E
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
E
H
G
J
ON CHARACTERISTICS
hFE
K
DC Current Gain*
DIMENSIONS
(I C=1.0mAdc, VCE=10Vdc)
(I C=10mAdc, VCE=10Vdc)
(I C=30mAdc, VCE=10Vdc)
VCE(sat)
VBE(sat)
25
40
40
----
Collector-Emitter Saturation Voltage
(I C=20mAdc, IB=2.0mAdc)
0.5
Vdc
Base-Emitter Saturation Voltage
(I C=20mAdc, IB=2.0mAdc)
0.9
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
SMALL-SIGNAL CHARACTERISTICS
fT
Ccb
Current Gain-Bandwidth Product
(I C=10mAdc, VCE=20Vdc, f=100MHz)
Collector-Emitter Capacitance
(VCB=20Vdec, IE=0, f=1.0MHz)
50
3.0
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
–55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
.031
.800
pF
THERMAL CHARACTERISTICS
Characteristic
Suggested Solder
Pad Layout
MHz
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
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2014/03/19
MCC
MMBTA42
Micro Commercial Components
120
100
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
80
25°C
60
40
-55°C
20
0
0.1
1.0
100
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
fă,
T CURRENT-GAIN Ċ BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
1.0
1000
Figure 2. Capacitance
TJ = 25°C
VCE = 20 V
f = 20 MHz
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 3. Current–Gain – Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
0.6
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
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Revision: C
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2014/03/19
TM
MCC
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Tape&Reel;3Kpcs/Reel
Part Number-TP
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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***LIFE SUPPORT***
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approval of Micro Commercial Components Corporation.
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2014/03/19
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