IXYS GMM3X180-004X2 Three phase full bridge with trench mosfets in dcb isolated high current package Datasheet

GMM 3x180-004X2
Three phase full Bridge
VDSS
= 40 V
= 180 A
ID25
RDSon typ. = 1.9 mW
with Trench MOSFETs
in DCB isolated high current package
Preliminary data
L1+
L2+
G1
G3
G5
S1
S3
S5
L1
L2
G4
G6
G2
S2
L3+
L3
S4
S6
L1-
L2-
L3-
Applications
MOSFETs
Symbol
Conditions
VDSS
TVJ = 25°C to 150°C
Maximum Ratings
VGS
40
V
± 20
V
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
180
136
120
A
A
A
IF25
IF90
IF110
TC = 25°C (diode)
TC = 90°C (diode)
TC = 110°C (diode)
182
112
88
A
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
RDSon
1)
on chip level at
VGS = 10 V
TVJ = 25°C
TVJ = 125°C
VGS(th)
VDS = 20 V; ID = 1 mA
IDSS
VDS = VDSS; VGS = 0 V
IGSS
VGS = ± 20 V; VDS = 0 V
Qg
Qgs
Qgd
VGS = 10 V; VDS = 20 V; ID = 100 A
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
RthJC
RthJH
1)
typ.
max.
1.9
2.8
2.5
5.3
2.5
TVJ = 25°C
TVJ = 125°C
inductive load
VGS = +10/0 V; VDS = 15 V
ID = 135 A; RG = 39 Ω;
TJ = 125°C
mW
mW
4.5
V
5
µA
µA
0.2
µA
50
110
33
30
nC
nC
nC
150
240
350
170
ns
ns
ns
ns
0.12
0.51
0.003
mJ
mJ
mJ
with heat transfer paste (IXYS test setup)
1.3
1.0
1.6
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
K/W
K/W
VDS = ID·(RDS(on) + RPin to Chip)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307b
1-7
GMM 3x180-004X2
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD
(diode) IF = 100 A; VGS = 0 V
0.9
trr
QRM
IRM
IF = 100 A; -diF/dt = 600 A/µs
VR = 15 V; TJ = 125°C
38
0.31
14
1.2
V
ns
µC
A
Component
Symbol
Conditions
Maximum Ratings
IRMS
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
2 pins for output L1, L2, L3
TJ
Tstg
VISOL
IISOL < 1 mA, 50/60 Hz, f = 1 minute
FC
mounting force with clip
Symbol
Conditions
75
A
-55...+175
-55...+125
°C
°C
1000
V~
50 - 250
N
Characteristic Values
min.
typ.
max.
Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3
0.9
mW
CP
160
pF
25
g
coupling capacity between shorted
pins and back side metallization
Weight
1)
VDS = ID·(RDS(on) + RPin to Chip)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307b
2-7
GMM 3x180-004X2
Leads
SMD
Ordering
Standard
Part Name &
Packing Unit Marking
GMM 3x180-004X2 - SMD
Part Marking
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Delivering Mode
Base Qty.
Ordering
Code
Blister
28
509042
20110307b
3-7
GMM 3x180-004X2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307b
4-7
GMM 3x180-004X2
400
1.2
IDSS = 0.25 mA
VDSS
VDS = 16 V
350
1.1
300
1.0
ID
normalized
[A]
0.9
250
200
150
100
0.8
TJ = 125°C
50
0.7
-25
0
25
50
75
100
125
0
150
TJ = 25°C
0
1
2
3
Fig. 1 Drain source breakdown voltage VDSS
vs. junction temperature TVJ
ID
6
7
VGS =
20 V
15 V
10 V
TVJ = 25°C
7V
300
6.5 V
[A]
ID
5.5 V
100
TVJ = 125°C
7V
6.5 V
200
6V
[A]
6V
5.5 V
100
5V
5V
0
1
2
3
0
4
0
1
VDS [V]
2.0
RDS(on)
norm.
5
RDS(on)
1.5
1.0
3.5
5V
5.5 V 6 V
6.5 V
RDS(on)
mΩ
TVJ = 125°C
2.5
RDS(on)
norm. 2.0
VGS = 10 V
15 V
20 V
1.5
RDS(on) normalized
0.5
1
50
75
100
125
0
150
TVJ [°C]
Fig. 5 Typ. drain source on-state resistance RDS(on)
versus junction temperature TJ
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
7V
3.0
2
25
4
4.0
4
3
0
3
Fig. 4 Typical output characteristic
VGS = 10 V
ID = 135 A
0.0
-25
2
VDS [V]
Fig. 3 Typical output characteristic
2.5
9
Fig. 2 Typical transfer characteristic
200
0
8
400
VGS =
20 V
15 V
10 V
300
5
VGS [V]
TJ [°C]
400
4
1.0
0.5
0
100
200
300
400
ID [A]
Fig. 6 Typ. drain source on-state resistance
RDS(on) versus ID
20110307b
5-7
GMM 3x180-004X2
12
200
ID = 135 A
TVJ = 25°C
10
180
160
140
8
VGS
ID120
VDS = 15 V
6
100
[V]
[A]80
VDS = 28 V
4
60
40
2
20
0
0
20
40
60
80
100
0
120
0
25
50
75
QG [nC]
400
VDS = 15 V
VGS = +10/0 V
TVJ = 125°C
t
0.2
td(on)
[mJ]
0.6
600
0.5
500
0.4 VDS = 15 V
VGS = +10/0 V
400
[ns]
[mJ]
td(off)
0.3 RG = 39 Ω
TVJ = 125°C
0.2
tf
0.1
10x Erec(off)
40
200
Eoff
100
Eon
0
80
120
160
200
0
0.0
300
200
[ns]
Eoff
0
40
80
120
160
200
0
ID [A]
Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching
1.0
Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching
500
VDS = 15 V
VGS = +10/0 V
1.0
1000
VDS = 15 V
VGS = +10/0 V
tr
ID = 135 A
Eon,
t
100
ID [A]
0.8
200
300
Erec(off)
0.0
175
tr
RG = 39 Ω
0.1
150
Fig. 8 Drain current ID vs. temperature TC
0.4
Eon,
125
TC [°C]
Fig. 7 Gate charge characteristics
0.3
100
400
0.8
300
0.6
ID
td(on)
TJ = 125°C
Erec(on) 0.6
= 135 A
800
TVJ = 125°C
t
[ns]
[mJ] 0.4
td(off)
200
Eoff
[mJ]
600
Eoff
0.4
t
[ns]
400
tf
0.2
100
Eon
0.0
0
20
0.2
200
Erec(on) x10
40
60
80
100
0
120
0.0
0
20
40
60
80
100
0
120
RG [Ω]
RG [Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307b
6-7
GMM 3x180-004X2
20
VR = 15 V
TVJ = 125°C
48
IF = 50 A
100 A
150 A
16
44
trr
IRM 12
40
150 A
[ns]
[A]
100 A
36
4
50 A
32
200
300
400
500
600
700
0
200
800
300
400
500
600
700
800
-diF /dt [A/µs]
-diF /dt [A/µs]
Fig. 13 Typ. reverse recovery time trr of the body diodes versus di/dt
Fig. 14 Typ. reverse recovery current IRM of the body diodes versus di/dt
0.6
400
350
0.5
IF = 50 A
100 A
150 A
0.4
Qrr
300
IS
0.3
[µC]
8
250
200
[A]
0.2
150
TJ = -25°C
25°C
125°C
150°C
100
0.1
50
0.0
200
400
600
0
0.0
800
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD [V]
-diF /dt [A/µs]
Fig. 15 Typ. reverse recovery charge Qrr of the body diodes versus di/dt
Fig. 16 Typ. source current IS versus
source drain voltage VSD (body diode)
0.7
0.6
0.5
Zth
0.4
[K/W] 0.3
0.2
0.1
Fig. 17 Definition of switching times
0.0
0.001
0.01
0.1
1
10
t [s]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307b
7-7
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