NJSEMI GES5306A Silicon darlington transistor Datasheet

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
—
Signal Transistor*
2N5305,6, 6A, GES5305,6, 6A
Silicon Darlington Transistors
TO-92
TO-98
MAXIMUM RATINGS, Absoluts-Maximum Values:
COLLECTORTO EMITTER VOLTAGE (VCEO)
EMITTER TO BASE VOLTAGE (VEBO)
COLLECTOR TO BASE VOLTAGE (VOBO)
CONTINUOUS COLLECTOR CURRENT (Ic)
COLLECTOR CURRENT (PULSED)" (lc)
CONTINUOUS BASE CURRENT (IB)
TOTAL POWER DISSIPATION (TA s S5°C)(PT)
DERATE FACTOR (TA 5- 2S°C)
OPERATING TEMPERATURE(Tj)
STORAGE TEMPERATURE (TSTG)
LEAD TEMPERATURE, 1/16" ± «32" (1.58mm 10.8mm) from case lor 10S max (TJ
25V
12V
25V
300mA
500 mA
50mA
400mW
4 mW/'C
-65° to + 125«C
-65° to + 150°C
•Pulsed Conditions: Pulse width 3 300 )is. Duty factor £ 2%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Signal Transistors
2N5305,6, 6A, GES5305, 6, 6A
ELECTRICAL CHARACTERISTICS, At Ambient Temperature <TA) = 26°C Unless Otherwise Specified
LIMITS
CHARACTERISTICS
Colleclor-To-Emltier Breakdown Voltage
(l c = 10mA, IB- 0)
Collector-To-Base Breakdown Voltage
<|C = 0.1HA.IE = 0)
Emitter-To-Base Breakdown Voltage
de - 0>A, lc - 0)
DC Forward Current Transfer Ratio
(|n > 2mA, VCE . 5V) 2NS305, QES6305
(lc - 100mA, VCE . 5V) 2NS305, GES5305
(lc - 2 mA, VCE . 5V) 2NB308, GES5306A
(I,: - 100mA. VCE - 5V) 2N5306. GES5306A
Collector-To-Emltter Saturation Voltage
(lc - 200mA, IB - 0.2mA)
Base-To-Emitter Saturation Voltage
(lc - 200mA. IB - 0.2mA)
Bste-To-Emitler Voltage
(lc - 200mA, VCE • 6V)
Colleclor-To-Base Cutoff Current
<V CB -25V,l e = 0)
(VOB = ?5V,IE = 0,TA.100«)C)
Small-Signal Current Transfer Ratio
(VcE ' 5V> >C « ZmA. ' • ' KHZ)
2N5306, GES5305
(VCE - 5V, lc = 2mA. f = 1 KHZ)
2N6306, 6A, GES5306, 6A
(VCE "
5V'!C
- 2mA - ( " 10 MHZ)
Input Capacitance
(VFB - 0.6V, f - 1 MHZ)
Output Capacitance
(VCB = 10V, 1 = 1 MHZ)
Input Impedance
(VCE - SV. lc . 2mA, f = 1KHz)
Gain-Bandwidth Product
(VCE • 5V> 'c • 2mA. 1 " 10MHz)
Nolce Figure
(VCE - 5V> 'c = 0-«m A, Rg = 160 kO,
1= 10 Hz, to 10 kHz, Bandwidth - 15 7kHz)2NW06A.GES5306A
TERMINAL CONNECTIONS
TO-92 Package
Lead 1 - Emitter
Lead 2•Bate
Lead 3 • Collector
SYMBOL
MIN.
MAX.
BVCEO
25
_
BVcao
25
BVEBO
12
_
2,000
6,000
7,000
20,000
20,000
riFE
VCE(««i)
VBE(sai)
VBE
—
-
70,000
1.*
_
1.6
100
-
20
If.
2.000
7.000
-
IMI.I
15.6
-
C.b
Ccb
-
V
1.6
_
ICBO
V
-
_
_
UNITS
10.S Typical
7.6
Typical
10
650 Typical
nA
fA
dB
Pf
KO
IT
60
_
MHZ
en
195
Typical
230
nVVHz
TERMINAL CONNECTIONS
TO-98 Package
Lead 1 - Emitter
Lead 2 - Collector
Lead 3 - Bate
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