SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DZT953) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data • • • • • • • COLLECTOR Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.115 grams (approximate) Maximum Ratings BASE EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V IC 6 A Ptot 1 (Note 3) 3 (Note 4) W Tj, TSTG -55 to +150 °C Continuous Collector Current Power Dissipation Operating and Storage Temperature Range Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, pad layout as shown on page 4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum. DS30737 Rev. 3 - 2 1 of 4 www.diodes.com DZT853 © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 200 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 100 ⎯ ⎯ V IC = 10mA*, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ V IE = 100μA, IC = 0 nA μA VCB = 150V, IE = 0 VCB = 150V, IE = 0, TA = 100°C OFF CHARACTERISTICS B Collector Cutoff Current ICBO ⎯ ⎯ 10 1 Emitter Cutoff Current IEBO ⎯ ⎯ 10 nA VEB = 6V, IC = 0 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 150 340 mV IC = 0.1A, IB = 5mA* IC = 2A, IB = 100mA* IC = 5A, IB = 500mA* Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1250 mV IC = 5A, IB = 500mA* Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ 1100 mV ICE = 5A, VCE = 2V* hFE 100 100 50 20 ⎯ ⎯ ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 10mA, VCE = 2V* IC = 2A, VCE = 2V* IC = 4A, VCE = 2V* IC = 10A, VCE = 2V* fT ⎯ 130 ⎯ MHz Cobo ⎯ 35 ⎯ pF VCB = 10V, f = 1MHz ton toff ⎯ 50 1650 ⎯ ns ns IC = 1A, VCC = 10V IB1 = IB2 = 100mA ON CHARACTERISTICS DC Current Gain B B B B SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance IC = 100mA, VCE = 10V, f = 50MHz SWITCHING CHARACTERISTICS Switching Times * Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% Typical Characteristics @Tamb = 25°C unless otherwise specified Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Notes: 3. Fig. 2 Collector Current vs. Collector Emitter-Voltage Device mounted on FR-4 PCB, pad layout as shown on page 4. DS30737 Rev. 3 - 2 2 of 4 www.diodes.com DZT853 © Diodes Incorporated NEW PRODUCT Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 5) Packaging SOT-223 Device DZT853-13 Notes: Shipping 2500/Tape & Reel 5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information DZT853 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 T Code 2007 U 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 DS30737 Rev. 3 - 2 3 of 4 www.diodes.com Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D DZT853 © Diodes Incorporated NEW PRODUCT Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) (Unit:mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30737 Rev. 3 - 2 4 of 4 www.diodes.com DZT853 © Diodes Incorporated