Dc MJD32C Technical specifications of pnp epitaxial planar transistor Datasheet

DC COMPONENTS CO., LTD.
MJD32C
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
TO-252(DPAK)
Pinning
1 = Base
2 = Collector
3 = Emitter
.268(6.80)
.252(6.40)
.077(1.95)
.065(1.65)
.217(5.50)
.205(5.20)
Symbol
Rating
Unit
VCBO
-100
V
Collector-Base Voltage
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
o
Total Power Dissipation(TC=25 C)
.022(0.55)
.018(0.45)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic
.063(1.60)
.055(1.40)
IC
-3
A
PD
15
W
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.228(5.80)
.213(5.40)
1
2
.059(1.50)
.035(0.90)
3
.035
Max
(0.90)
.032
Max
(0.80)
.110(2.80)
.087(2.20)
.091
Typ
(2.30)
.024(0.60)
.018(0.45)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
-100
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
-100
-
-
V
IC=-30mA, IB=0
ICES
-
-
-20
µA
VCE=-100V, VBE=0
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
(1)
Base-Emitter On Voltage
(1)
DC Current Gain
Transition Frequency
(1)Pulse Test: Pulse Width
Test Conditions
IC=-1mA, IE=0
ICEO
-
-
-50
µA
VCE=-60V, IB=0
IEBO
-
-
-1
mA
VEB=-5V, IC=0
VCE(sat)
-
-
-1.2
V
IC=-3A, IB=-375mA
VBE(on)
-
-
-1.8
V
IC=-3A, VCE=-4V
hFE1
25
-
-
-
IC=-1A, VCE=-4V
hFE2
10
-
50
-
fT
3
-
-
MHz
380µs, Duty Cycle
2%
IC=-3A, VCE=-4V
IC=-0.5A, VCE=-10V, f=1MHz
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