Central CPD74 Switching diode monolithic isolated quad switching diode chip Datasheet

Central
PROCESS
TM
Semiconductor Corp.
CPD74
Switching Diode
Monolithic Isolated Quad Switching Diode Chip
PROCESS DETAILS
Die Size
25 x 25 MILS
Die Thickness
6.0 MILS
Anode 1, 2, 3, 4 Bonding Pad Area
3.5 x 4.0 MILS
Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS
Top Side Metalization
Al - 12,000Å
Back Side Metalization
Au - 5,000Å
GEOMETRY
GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMEDA-6i
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (1-November 2004)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD74
Typical Electrical Characteristics
R0 (1-November 2004)
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