DIODES ZXTP25100BFH

ZXTP25100BFH
100V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -140V, BV(BR)CEO > -100V
BV(BR)ECX > -7V ;
IC(cont) = -2A
VCE(sat) < -130mV @ -1A
RCE(sat) = 108m typical
PD = 1.25W
Complementary part number ZXTN25100BFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
140V forward blocking voltaget
•
7V reverse blocking voltage
E
Applications
•
MOSFET and IGBT gate driving
•
DC - DC converters
•
Motor drive
•
Relay, lamp, and solenoid drive
Pinout - top view
Ordering information
Device
ZXTP25100BFHTA
Reel size
(inches)
Tape width
Quantity per reel
7
8mm
3,000
Device marking
056
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ZXTP25100BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-140
V
Collector-emitter voltage (forward blocking)
VCEX
-140
V
Collector-emitter voltage
VCEO
-100
V
Emitter-collector voltage (reverse blocking)
VECX
-7
V
Emitter-base voltage
VEBO
-7
V
IC
-2
A
Peak pulse current
ICM
-5
A
Power dissipation at TA =25°C (a)
Linear derating factor
PD
0.73
5.84
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
1.05
8.4
W
mW/°C
Power dissipation at TA =25°C (c)
Linear derating factor
PD
1.25
9.6
W
mW/°C
Power dissipation at TA =25°C (d)
Linear derating factor
PD
1.81
14.5
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
Junction to ambient (a)
RJA
171
°C/W
Junction to ambient (b)
RJA
119
°C/W
Junction to ambient (c)
RJA
100
°C/W
Junction to ambient (d)
RJA
69
°C/W
Continuous collector current (b)
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTP25100BFH
Characteristics
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ZXTP25100BFH
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-140
Collector-emitter
breakdown voltage
(forward blocking)
BVCEX
Collector-emitter
breakdown voltage (base
open)
Max.
Unit
Conditions
-165
V
IC = -100A
-140
-165
V
IC = -100A,
RBE < 1k or
-0.25V < VBE < 1V
BVCEO
-100
-125
V
IC = -10mA (*)
Emitter-collector
breakdown voltage
(reverse blocking)
BVECX
-7
8.2
V
IE = -100A,
RBC < 1k or
-0.25V < VBC < 0.25V
Emitter-base breakdown
voltage
BVEBO
-7
-8.2
V
IE = -100A
Collector cut-off current
ICBO
<-1
-50
-20
nA
A
VCB = -112V
VCB = -112V, TAMB= 100°C
Collector emitter cut-off
current
ICEX
-
-100
nA
VCE = -112V;
RBE < 1k or
-0.25V < VBE < 1V
Emitter cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter
saturation voltage
VCE(sat)
-60
-90
mV
IC = -0.5A, IB = -50mA (*)
-240
-350
mV
IC = -0.5A, IB = -10mA (*)
-100
-130
mV
IC = -1A, IB = -100mA (*)
-215
-295
mV
IC = -2A, IB = -200mA (*)
Base-emitter saturation
voltage
VBE(sat)
-900
-1000
mV
IC = -2A, IB = -200mA (*)
Base-emitter turn-on
voltage
VBE(on)
-830
-950
mV
IC = -2A, VCE = -2V (*)
Static forward current
transfer ratio
hFE
100
200
300
55
105
IC = -1A, VCE = -2V (*)
15
25
IC = -2A, VCE = -2V (*)
Transition frequency
fT
200
Output capacitance
COBO
15
Turn-on time
t(on)
Turn-off time
t(off)
IC = -10mA, VCE = -2V (*)
MHz
IC = -100mA, VCE = -5V
f = 100MHz
pF
VCB = -10V, f = 1MHz (*)
31
ns
384
ns
VCC = -10V, IC = -500mA,
IB1 = IB2= -50mA
25
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
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ZXTP25100BFH
Typical characteristics
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ZXTP25100BFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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United Kingdom
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reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
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