Renesas HAF2015RJ-EL Silicon n channel mosfet series power switching Datasheet

HAF2015RJ
Silicon N Channel MOS FET Series
Power Switching
REJ03G1141-0300
Rev.3.00
Aug 27, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
•
•
•
•
•
Logic level operation (5 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Temperature hysteresis type.
High density mounting.
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8 <FP-8DA> )
87
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
65
87
12
34
12
7
34
D
D
8
5
2
4
Gate resistor
Tmperature
sensing
circuit
1, 3
2, 4
5, 6, 7, 8
D
D
G
65
Self
return
circuit
Gate resistor
G
Gate
shutdown
circuit
Tmperature
sensing
circuit
Self
return
circuit
Gate
shutdown
circuit
1
MOS1
S
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 1 of 9
3
MOS2
S
6
Source
Gate
Drain
HAF2015RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
VDSS
VGSS
VGSS
ID
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Value
60
16
–2.5
2
4
2
0.54
25
2
1.5
150
–55 to +150
ID (pulse) Note 1
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Pch Note 3
Tch
Tstg
Unit
V
V
V
A
A
A
A
mJ
W
W
°C
°C
PW ≤ 10 µs, duty cycle ≤ 1%
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Tch = 25°C, Rg > 50 Ω
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Hysteresis temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH (sd) 1
IIH (sd) 2
Tsd
Thr
VOP
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 2 of 9
Min
3.5
—
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.53
0.2
175
120
—
Max
—
1.2
100
50
1
—
—
—
—
12
Unit
V
V
µA
µA
µA
mA
mA
°C
°C
V
Test Conditions
Vi = 5 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
Channel temperature
HAF2015RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
ID1
ID2
V (BR) DSS
V (BR) GSS
V (BR) GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS (op) 1
IGS (op) 2
IDSS1
IDSS2
Min
0.7
—
60
16
–2.5
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.53
0.2
—
—
Max
—
10
—
—
—
100
50
1
–100
—
—
10
10
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
µA
VGS (off)
RDS (on)
RDS (on)
|yfs|
Coss
1.4
—
—
0.5
—
—
130
110
2.5
139
2.5
200
160
—
—
V
mΩ
mΩ
S
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
td (on)
tr
td (off)
tf
VDF
trr
—
—
—
—
—
—
4.2
20
1
1
0.82
55
—
—
—
—
—
—
µs
µs
µs
µs
V
ns
Over load shut down operation time Note6
tos1
—
15
—
ms
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 3 of 9
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
IG = 500 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 5 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0
Ta = 125°C
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 5 V Note 5
ID = 1 A, VGS = 10 V Note 5
ID = 1 A, VDS = 10 V Note 5
VDS = 10 V, VGS = 0
f = 1 MHz
ID = 1 A
VGS = 5 V
RL = 30 Ω
IF = 2 A, VGS = 0
IF = 2 A, VGS = 0
diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
HAF2015RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
50
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW < 10 s
2.0
2
Dr
ive
1D
riv
1.0
eO
pe
Op
e
rat
ra
tio
n
ID (A)
3.0
Thermal shut down
20 Operation area
10
Drain Current
Channel Dissipation
Pch (W)
4.0
2
ion
0
0
50
100
150
200
10
0
µs
5
1
DC
Op
PW
m
s
=
1 Operation in
10
er
at
ms
0.5 this area is
ion
(P
limited by RDS (on)
W Note
≤
0.2
10 7
Ta
=
25°C
s)
0.1
1 shot pulse
0.05 1 Drive Operation
0.03
0.3 0.5 1
2
5 10 20
50 100
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
5
2.5
Pulse Test
10 V
8V
6V
5V
4
ID (A)
ID (A)
Typical Transfer Characteristics
Tc = –25°C
25°C
75°C
1.5
Drain Current
3
Drain Current
2.0
4V
2
VGS = 3.5 V
1
1.0
0.5
VDS = 10 V
Pulse Test
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.20
0.15
ID = 1 A
0.10
0.5 A
0.05
0.2 A
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 4 of 9
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.25
1
500
200
VGS = 5 V
100
10 V
50
20
Pulse Test
10
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.5 A
0.2 A
ID = 1 A
0.20
VGS = 5 V
0.15
ID = 1 A
0.2 A
0.10
0.5 A
10 V
0.05
0
–40
0
40
80
Case Temperature
120
160
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAF2015RJ
10
VDS = 10 V
Pulse Test
5
Tc = –25°C
25°C
2
1
75°C
0.5
0.2
0.1
0.05 0.1
Tc (°C)
1
2
5
Switching Characteristics
100
500
VGS = 5 V, VDD = 30 V
50 PW = 300 µs, duty ≤ 1 %
Switching Time t (µs)
Reverse Recovery Time trr (ns)
0.5
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.01 0.02 0.05 0.1 0.2
0.5
Reverse Drain Current
1
2
tr
20
10
td(on)
5
2
1
0.5
0.01 0.02 0.05 0.1 0.2
5
tf
td(off)
IDR (A)
0.5 1
Drain Current
2
5
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current vs.
Source to Drain Voltage
5
1000
Pulse Test
VGS = 5 V
4
Capacitance C (pF)
Reverse Drain Current IDR (A)
0.2
3
0V
2
1
300
100
30
VGS = 0
f = 1 MHz
0
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 5 of 9
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
HAF2015RJ
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
8
VDD = 16 V
6
4
2
0
0.0001
0.001
0.01
0.1
1
200
180
160
140
120
ID = 0.2 A
100
0
Shutdown Time of Load-Short Test PW (S)
2
4
6
8
Gate to Source Voltage
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
1s
ho
0.0001
10 µ
tp
D=
PDM
e
uls
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
0.0001
10 µ
1s
ho
t
ls
pu
100 µ
D=
PDM
e
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 6 of 9
10
100
1000
10
VGS (V)
10000
HAF2015RJ
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
5V
50 Ω
VDD
= 30 V
10%
90%
td(on)
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 7 of 9
10%
tr
90%
td(off)
tf
HAF2015RJ
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-A
Previous Code
FP-8DA
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
b1
1
Z
c1
c
*2 E
Index mark
HE
5
8
4
Terminal cross section
*3
bp
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
x M
e
Reference
Symbol
A
A1
L1
L
Detail F
y
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
HE
e
x
y
Z
L
L1
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.42 0.50
0.40
0.19 0.22 0.25
0.20
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
MASS[Typ.]
0.085g
F
Package Name
SOP-8
D
E
A2
A1
A
bp
b1
c
c1
Dimension in Millimeters
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
A1
A
L1
L
y
Detail F
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 8 of 9
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Dimension in Millimeters
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
HAF2015RJ
Ordering Information
Part No.
HAF2015RJ-EL
Quantity
2500 pcs/Reel
REJ03G1141-0300 Rev.3.00 Aug 27, 2007
Page 9 of 9
Shipping Container
Embossed tape
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