DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate Equivalent Circuit TOP VIEW Maximum Ratings S G Source TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Value 30 ±20 5.8 4.2 20 2.0 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 VGS(th) 1.9 47 92 4.7 0.78 112 |Yfs| VSD 1.3 ⎯ ⎯ ⎯ ⎯ ⎯ 1.1 S V Ciss Coss Crss ⎯ ⎯ ⎯ 268 73 50 ⎯ ⎯ ⎯ pF pF pF RDS (ON) 2.2 57 nA V mΩ Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.2A VDS = 5V, ID = 4.2A VGS = 0V, IS = 2.0A VDS = 5V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3112S Document number: DS31445 Rev. 2 - 2 1 of 4 www.diodes.com July 2008 © Diodes Incorporated DMN3112S 10 10 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 4.5V VGS = 4.0V 6 4 VGS = 3.5V 6 4 TA = 150°C 2 2 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 1 VGS = 4.5V VGS = 10V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.24 T A = 150°C 0.20 1.0 0.8 0.12 TA = 25°C 0.08 TA = -55°C 0.04 0 2 10 4 6 8 ID, DRAIN CURRENT (A) 0.14 0.12 VGS = 4.5V ID = 5A 0.10 0.08 0.06 VGS = 10V ID = 10A 0.04 0.02 Fig. 5 On-Resistance Variation with Temperature Document number: DS31445 Rev. 2 - 2 T A = 85°C 0.16 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMN3112S TA = 125°C 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V ID = 5A 0.6 -50 VGS = 4.5V 0.28 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature VGS = 10V ID = 10A 1.2 0.32 20 1.6 1.4 5 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 1 0.1 TA = 25°C TA = -55°C VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA = 85°C TA = 125°C VGS = 3.0V RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8 2 of 4 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature July 2008 © Diodes Incorporated DMN3112S ID = 1mA TA = 25°C 8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 2.0 ID = 250µA 1.6 1.2 0.8 0.4 6 4 2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 C, CAPACITANCE (pF) Ciss 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 2.4 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 168°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN3112S Document number: DS31445 Rev. 2 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 3 of 4 www.diodes.com 10 100 1,000 July 2008 © Diodes Incorporated DMN3112S Ordering Information (Note 5) Part Number DMN3112S-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. MN4 Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 MN4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM NEW PRODUCT Marking Information 2010 X Mar 3 2011 Y Apr 4 May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3112S Document number: DS31445 Rev. 2 - 2 4 of 4 www.diodes.com July 2008 © Diodes Incorporated