isc Product Specification INCHANGE Semiconductor isc Triacs BTB04 T/D/S/A FEATURES ·With TO-220AB non insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT IT(RMS) RMS on-state current (full sine wave)Tj=95℃ 4 A ITSM Non-repetitive peak on-state current tp=10ms 40 A Operating junction temperature 110 ℃ -45~150 ℃ Tj Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case 3.2 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W SYMBOL PARAMETER 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT VDRM Repetitive peak off-state voltage 400 600 700 V VRRM Repetitive peak reverse voltage 400 600 700 V ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current CONDITIONS MAX VR=VRRM, VR=VRRM, Tj=110℃ VD=VDRM, VD=VDRM, Tj=110℃ 0.01 0.5 0.01 0.5 Ⅰ-Ⅱ-Ⅲ IGT VD=12V; RL= 33Ω Gate trigger current Ⅳ IH UNIT mA mA T D S A 5 5 10 10 5 10 10 25 15 15 25 25 mA Holding current IGT= 0.1A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω 1.5 V VTM On-state voltage IT= 5A 1.65 V isc website：www.iscsemi.cn mA