MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 3 2 3 Features • Pb−Free Packages are Available • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 3 V to 26 V Standard Zener Breakdown Voltage Range − 5.6 V to 33 V Peak Power − 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 A Flammability Rating UL 94 V−O Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 SOT−23 CASE 318 STYLE 12 xxx M MARKING DIAGRAM 2 xxx M = Device Code = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 7 1 Publication Order Number: MMBZ5V6ALT1/D MMBZ5V6ALT1 Series MAXIMUM RATINGS Rating Symbol Value Unit Ppk 24 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 °mW° mW/°C Thermal Resistance Junction−to−Ambient RJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C MMBZ5V6ALT1 thru MMBZ10VALT1 MMBZ12VALT1 thru MMBZ33VALT1 Thermal Resistance Junction−to−Ambient RJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Package Shipping† SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel Device MMBZ5V6ALT1 MMBZ5V6ALT1G MMBZ5V6ALT3 MMBZ5V6ALT3G MMBZ6VxALT1 MMBZ6VxALT1G MMBZ6VxALT3 MMBZ6VxALT3G MMBZ9V1ALT1 MMBZ9V1ALT1G MMBZ9V1ALT3 MMBZ9V1ALT13G MMBZxxVALT1 MMBZxxVALT1G MMBZxxVALT3 MMBZxxVALT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMBZ5V6ALT1 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF VC VBR VRWM V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) 24 WATTS Max Zener Impedance (Note 5) VC @ IPP (Note 6) @ IT ZZT @ IZT Breakdown Voltage IR @ VRWM ZZK @ IZK VC IPP VBR Device Device Marking VRWM Volts A Min Nom Max mA mA V A mV/C MMBZ5V6AL 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 MMBZ6V2AL 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80 MMBZ6V8AL 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4 MMBZ9V1AL 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5 MMBZ10VAL 10A 6.5 0.3 9.50 10 10.5 1.0 − − − 14.2 1.7 7.5 VBR (Note 4) (V) 40 WATTS (VF = 0.9 V Max @ IF = 10 mA) VRWM Device Device Marking IR @ VRWM Volts nA MMBZ12VAL 12A 8.5 MMBZ15VAL 15A 12 MMBZ18VAL 18A MMBZ20VAL 20A MMBZ27VAL MMBZ33VAL Breakdown Voltage VC @ IPP (Note 6) @ IT VC IPP VBR Min Nom Max mA V A mV/C 200 11.40 12 12.60 1.0 17 2.35 7.5 50 14.25 15 15.75 1.0 21 1.9 12.3 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 17 50 19.00 20 21.00 1.0 28 1.4 17.2 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 VBR (Note 4) (V) 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 5 and derate per Figure 6 http://onsemi.com 3 MMBZ5V6ALT1 Series TYPICAL CHARACTERISTICS 1000 15 100 12 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 10 1 6 0.1 3 0 −40 0 + 100 + 50 TEMPERATURE (°C) + 150 0.01 −40 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 320 PD, POWER DISSIPATION (mW) 300 C, CAPACITANCE (pF) 280 240 200 5.6 V 160 120 15 V 80 40 250 ALUMINA SUBSTRATE 200 150 100 FR−5 BOARD 50 0 0 0 1 2 3 0 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) http://onsemi.com 4 MMBZ5V6ALT1 Series PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 s VALUE (%) 100 PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Derating Curve MMBZ5V6ALT1 MMBZ5V6ALT1 100 RECTANGULAR WAVEFORM, TA = 25°C Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) 100 BIDIRECTIONAL 10 1 200 UNIDIRECTIONAL RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. http://onsemi.com 5 1000 MMBZ5V6ALT1 Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND MMBZ5V6ALT1 THRU MMBZ33VALT1 Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O CLOCK MMBZ5V6ALT1 THRU MMBZ33VALT1 CONTROL BUS GND MMBZ5V6ALT1 THRU MMBZ33VALT1 http://onsemi.com 6 MMBZ5V6ALT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S G DIM A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 MMBZ5V6ALT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. MMBZ5V6ALT1/D