Infineon CFY66-10P Hirel k-band gaas super low noise hemt Datasheet

CFY66
HiRel K-Band GaAs Super Low Noise HEMT
•
HiRel Discrete and Microwave Semiconductor
•
Conventional AlGaAs/GaAs HEMT
(For new design we recommend to use our
pseudo-morphic HEMT CFY67)
•
For professional super low-noise amplifiers
•
For frequencies from 500 MHz to > 20 GHz
•
Hermetically sealed microwave package
•
Super low noise figure, high associated gain
•
4
3
1
2
Space Qualified
ESA/SCC Detail Spec. No.: 5613/002,
Type Variant No.s 01 to 04
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY66-08 (ql)
Marking
-
Ordering Code Pin Configuration
see below
1
2
3
4
G
S
D
S
Package
Micro-X
CFY66-08P (ql)
CFY66-10 (ql)
CFY66-10P (ql)
CFY66-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
on request
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
on request
(see order instructions for ordering example)
Semiconductor Group
1 of 8
Draft D, September 99
CFY66
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
3.5
V
Drain-gate voltage
VDG
4.5
V
Gate-source voltage (reverse / forward)
VGS
- 3... + 0.5
V
Drain current
ID
60
mA
Gate forward current
IG
2
mA
RF Input Power, C- and X-Band 1)
PRF,in
+ 10
dBm
Junction temperature
TJ
150
°C
Storage temperature range
Tstg
- 65... + 150
°C
Ptot
200
mW
Tsol
230
°C
Rth JS
≤ 515 (tbc.)
K/W
Total power dissipation
2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Notes.:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
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Draft D, September 99
CFY66
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
10
30
60
mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA
-VGth
0.2
0.7
2.0
V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
IDp
-
< 50
-
µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
-IGp
-
< 50
200
µA
Transconductance
VDS = 2 V, ID = 10 mA
gm10
40
55
-
mS
Gate leakage current at operation
VDS = 2 V, ID = 10 mA
-IG10
-
< 0.5
2
µA
Thermal resistance
junction to soldering point
Rth JS
-
450
-
K/W
Semiconductor Group
3 of 8
Draft D, September 99
CFY66
Electrical Characteristics (continued)
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
NF
dB
CFY66-08, -08P
-
0.7
0.8
CFY66-10, 10P
-
0.9
1.0
Associated gain. 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
Ga
dB
CFY66-08, -08P
10.0
11.0
-
CFY66-10, 10P
9.5
10.5
-
Output power at 1 dB gain compression
VDS = 2 V, ID = 20 mA, f = 12 GHz
2)
P1dB
dBm
CFY66-06, -08, -10
-
11.0
-
CFY66-08P, -10P
10.0
11.0
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, September 99
CFY66
Typical Common Source S-Parameters
CFY66-08: V DS = 2 V,
f
|S11| <S11 |S21| <S21 |S12|
[GHz] [magn] [angle] [magn] [angle] [magn]
1,0
0,990
-21
4,451
161 0,0260
2,0
0,960
-39
4,282
144 0,0460
3,0
0,920
-57
4,148
126 0,0650
4,0
0,880
-77
3,979
108 0,0830
5,0
0,830
-95
3,727
93 0,0940
6,0
0,790 -111 3,444
78 0,1000
7,0
0,749 -124 3,206
64 0,1060
8,0
0,720 -137 3,029
50 0,1110
9,0
0,690 -150 2,907
38 0,1130
10,0 0,670 -165 2,845
25 0,1190
11,0 0,649
179 2,787
11 0,1210
12,0 0,628
164 2,699
-3
0,1200
13,0 0,610
151 2,614
-16 0,1200
14,0 0,597
138 2,584
-28 0,1190
15,0 0,584
121 2,550
-42 0,1180
16,0 0,580
104 2,484
-56 0,1170
17,0 0,580
89
2,461
-71 0,1150
18,0 0,580
74
2,456
-86 0,1160
I D = 10 mA, Z o = 50 Ω
<S12 |S22| <S22 k-Fact. S 21 /S 12 MAG
[angle] [magn] [angle] [magn] [dB]
[dB]
70
0,649
-16
0,14
22,3
61
0,623
-29
0,19
19,7
49
0,589
-43
0,27
18,0
37
0,560
-57
0,32
16,8
25
0,532
-70
0,39
16,0
14
0,506
-83
0,47
15,4
6
0,490
-94
0,55
14,8
-3
0,463 -103
0,63
14,4
-11
0,440 -113
0,70
14,1
-20
0,420 -121
0,74
13,8
-28
0,400 -130
0,79
13,6
-37
0,385 -143
0,84
13,5
-46
0,370 -153
0,91
13,4
-55
0,355 -162
0,96
13,4
-66
0,340 -172
1,01
13,3
12,8
-76
0,330
178
1,05
13,3
11,9
-87
0,325
169
1,08
13,3
11,5
-100 0,320
160
1,09
13,3
11,4
Typical Common Source Noise-Parameters
CFY66-08:
f
[GHz]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
V DS = 2 V, I D = 10 mA, Z o = 50 Ω
NF min
Rn
|Γ opt |
<Γ opt
[dB]
[magn]
[angle]
[Ω]
0,27
0,770
16
17,85
0,31
0,720
30
16,55
0,35
0,672
43
15,27
0,38
0,634
57
13,75
0,42
0,604
71
11,99
0,46
0,578
85
10,04
0,50
0,558
100
8,15
0,55
0,541
114
6,30
0,60
0,528
128
4,74
0,65
0,517
143
3,45
0,70
0,506
157
2,58
0,74
0,496
171
2,16
0,79
0,485
-175
2,27
0,85
0,472
-160
2,88
0,89
0,457
-146
3,99
0,95
0,437
-132
5,59
1,00
0,415
-118
7,63
1,06
0,389
-102
9,96
Semiconductor Group
5 of 8
Draft D, September 99
CFY66
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY66 -(nnl) (ql)
-(nnl)
Noise Figure/Gain and/or Power Level
(ql): Quality Level
Ordering Example:
Ordering Code: (on request)
CFY66-08P ES
For CFY66, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 10.0 dB, P1dB > 10 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
Semiconductor Group
++89 234 24480
++89 234 28434
[email protected]
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
6 of 8
Draft D, September 99
CFY66
Micro-X Package
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
7 of 8
Draft D, September 99
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