DIODES DMN2400UFB4-7

DMN2400UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
UItra-Small Surface Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected up to 1.5kV
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
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Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: Collector Dot
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
DFN1006H4-3
Drain
S
D
Gate
G
ESD PROTECTED TO 1.5kV
BOTTOM VIEW
TOP VIEW
Package Pin Configuration
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Ordering Information (Note 3)
Part Number
DMN2400UFB4-7
Notes:
Case
DFN1006H4-3
Packaging
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NC
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
NC = Product Type Marking Code
Dot Denotes Drain Side
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October 2010
© Diodes Incorporated
DMN2400UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 4.5V
Steady
State
Symbol
VDSS
VGSS
Value
20
±12
Units
V
V
ID
0.75
0.55
A
IDM
3
A
TA = 25°C
TA = 85°C
Pulsed Drain Current (Notes 4 & 5)
Thermal Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.47
258
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
IGSS
20
-
-
100
±1.0
±50
V
nA
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS(th)
RDS (ON)
1.0
0.7
0.9
0.55
0.75
0.9
1.2
V
Static Drain-Source On-Resistance
0.5
-
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
-
36.0
5.7
4.2
0.5
0.07
0.1
4.11
3.82
14.8
9.6
-
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ω
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS =16V, VGS = 0V,
f = 1.0MHz
VGS =4.5V, VDS = 10V,
ID =250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
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October 2010
© Diodes Incorporated
DMN2400UFB4
1.5
2.0
VGS = 4.5V
VDS = 5V
1.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.5V
VGS = 2.0V
VGS = 1.8V
1.0
0.5
VGS = 1.5V
1.0
0.5
T A = 150°C
TA = 125°C
T A = 85°C
TA = 25°C
T A = -55°C
VGS = 1.2V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.6
VGS = 1.8V
0.4
VGS = 2.5V
VGS = 4.5V
0.2
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 4.5V
ID = 1.0A
1.4
VGS = 2.5.V
ID = 500mA
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
0.8
0
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
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0.8
VGS = 4.5V
0.6
TA = 150°C
TA = 125°C
0.4
TA = 85°C
TA = 25°C
0.2
0
TA = -55°C
0
0.25
0.50
0.75
1.00
1.25 1.50
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
VGS = 2.5V
ID = 500mA
0.4
VGS = 4.5V
ID = 1.0A
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
October 2010
© Diodes Incorporated
DMN2400UFB4
2.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
IS, SOURCE CURRENT (A)
1.0
ID = 1mA
0.8
ID = 250µA
0.6
0.4
1.2
0.8
0
-25
60
f = 1MHz
50
40
Ciss
30
20
10
Coss
C rss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
IGSS, GATE-SOURCE LEAKAGE CURRENT (nA)
100,000
10,000
T A = 150°C
TA = 125°C
1,000
TA = 85°C
100
T A = 25°C
TA = -55°C
10
1
2
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
C, CAPACITANCE (pF)
TA = 25°C
0.4
0.2
0
-50
IGSS, GATE-SOURCE LEAKAGE CURRENT (nA)
1.6
TA = 150°C
100
TA = 125°C
TA = 85°C
10
TA = -55°C
1
2
TA = 25°C
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
100,000
10,000
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
Document number: DS32025 Rev. 3 - 2
1.2
1,000
4
DMN2400UFB4
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
0
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T A = 150°C
T A = 125°C
1,000
TA = 85°C
100
TA = 25°C
TA = -55°C
10
1
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
October 2010
© Diodes Incorporated
DMN2400UFB4
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA (t) = r(t) * R θJA
RθJA = 253°C/W
D = 0.02
0.01 D = 0.01
P(pk)
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
A
A1
D
b1
E
e
b2
L2
L3
DFN1006H4-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.02
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L1
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G1
Y
Z
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
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October 2010
© Diodes Incorporated
DMN2400UFB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
6 of 6
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October 2010
© Diodes Incorporated