NTE NTE2570 Silicon complementary transistors high current switch Datasheet

NTE2570 (NPN) & NTE2571 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut–Off Current
ICBO
VCB = 80V, IE = 0
–
–
0.1
mA
Emitter Cut–Off Current
IEBO
VEB = 4V, IC = 0
–
–
3.0
mA
DC Current Gain
hFE
VCE = 2V, IC = 1A
100
–
280
VCE = 2V, IC = 4A
30
–
–
VCE = 5V, IC = 1A
–
20
–
MHz
IC = 5A, IB = 10mA
–
–
0.4
V
–
–
0.5
V
90
–
–
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞
80
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
NTE2570
fT
VCE(sat)
NTE2571
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
V(BR)EBO IC = 1mA, IC = 0
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Turn–On Time
NTE2570
ton
VCC = 50V, VBE = –5V,
10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs
µ
Duty Cycle ≤ 1%
NTE2571
Storage Time
NTE2570
Test Conditions
tstg
NTE2571
Fall Time
NTE2570
tf
NTE2571
Min
Typ
Max
Unit
–
0.1
–
µs
–
0.2
–
µs
–
1.6
–
µs
–
0.7
–
µs
–
0.4
–
µs
–
0.2
–
µs
Note 1. For NTE2571, the polarity is reversed.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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