DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • NEW PRODUCT Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 3kV "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • • • • • • Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.002 grams (approximate) Drain SOT-523 D Gate Gate Protection Diode ESD PROTECTED TO 3kV Maximum Ratings TOP VIEW S TOP VIEW Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State Pulsed Drain Current Thermal Characteristics TA = 25°C TA = 85°C Symbol VDSS VGSS Value -20 ±6 Units V V ID -0.46 -0.33 A IDM -6 A Value 0.27 461 -55 to +150 Units W °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: G Source Symbol PD RθJA TJ, TSTG 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG1013T Document number: DS31784 Rev. 4 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013T @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -100 ±2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 RDS (ON) - |Yfs| VSD - -1.0 0.7 0.9 1.3 -1.2 V Static Drain-Source On-Resistance 0.5 0.7 1.0 0.9 -0.8 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -350mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 - Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 4. Short duration pulse test used to minimize self-heating effect. 1.5 10 VGS = -8.0V VDS = -5V 8 1.2 VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = -3.0V 0.9 VGS = -2.5V VGS = -2.0V 0.6 0.3 6 4 2 T A = 150°C VGS = -1.5V T A = 125°C VGS = -1.2V TA = -55°C 0 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG1013T Document number: DS31784 Rev. 4 - 2 5 2 of 6 www.diodes.com TA = 85°C T A = 25°C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 VGS = -1.8V 0.8 VGS = -2.5V 0.6 VGS = -4.5V 0.4 0.2 0 0.3 0.6 0.9 1.2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 1.5 1.7 1.2 1.5 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 VGS = -2.5V ID = -500mA 1.3 VGS = -4.5V ID = -1.0A 1.1 0.9 0.3 0.6 0.9 1.2 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 VGS = -2.5V ID = -500mA 0.8 0.6 VGS = -4.5V ID = -1.0A 0.4 0.2 0.7 0.5 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -IS, SOURCE CURRENT (A) 10 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG1013T Document number: DS31784 Rev. 4 - 2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 -VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG1013T 3 of 6 www.diodes.com 8 6 T A = 25°C 4 2 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMG1013T 100 1,000 f = 1MHz 10 -IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) Ciss Coss Crss TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 504°C/W D = 0.02 0.01 D = 0.01 P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response Ordering Information (Note 5) Part Number DMG1013T-7 Notes: Case SOT-523 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PA1 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG1013T Document number: DS31784 Rev. 4 - 2 Mar 3 PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D October 2009 © Diodes Incorporated DMG1013T Package Outline Dimensions A NEW PRODUCT B C G H K M N J L D SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout Y Z C X DMG1013T Document number: DS31784 Rev. 4 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013T IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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