IRF IRKH430-18 Super magn-a-pak-tm power module Datasheet

Bulletin I27400 rev. A 09/97
IRK.430.. SERIES
SUPER MAGN-A-pakTM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
430 A
High current capability
3000 V RMS isolating voltage with non-toxic substrate
High surge capability
High voltage ratings up to 2000V
Industrial standard package
UL recognition pending
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
Major Ratings and Characteristics
Parameters
IRK.430..
Units
I T(AV) or I F(AV)
430
A
82
°C
@ TC
I T(RMS)
@ TC
I TSM or IFSM @ 50Hz
I 2t
675
A
82
°C
15.7
KA
@ 60Hz
16.4
KA
@ 50Hz
1232
KA 2s
@ 60Hz
1125
KA 2s
12320
KA2√s
1600 to 2000
V
I 2√t
VDRM/V RRM range
T STG
range
- 40 to 150
°C
TJ
range
- 40 to 130
°C
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1
IRK.430.. Series
Bulletin I27400 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = TJ max.
V
V
mA
16
1600
1700
18
1800
1900
20
2000
2100
Type number
IRK.430..
100
On-state Conduction
Parameter
IRK.430..
Units Conditions
IT(AV)
Maximum average on-state current
430
A
IF(AV)
@ Case temperature
82
°C
IT(RMS)
Maximum RMS on-state current
675
A
ITSM
Maximum peak, one-cycle,
15.7
KA
t = 10ms
No voltage
IFSM
non-repetitive surge current
16.4
t = 8.3ms
reapplied
13.2
t = 10ms
100% VRRM
13.8
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = T J max.
1125
t = 8.3ms
reapplied
871
t = 10ms
100% VRRM
795
t = 8.3ms
reapplied
I2 t
I2 √t
Maximum I2t for fusing
Maximum I2√t for fusing
1232
12320
VT(TO)1 Low level value of threshold voltage
0.96
VT(TO)2 High level value of threshold voltage
1.06
KA 2s
180° conduction, half sine wave
180° conduction, half sine wave @ TC = 82°C
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x π x I T(AV) < I < π x IT(AV) ), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
(16.7% x π x I T(AV) < I < π x IT(AV) ), TJ = TJ max.
rt1
Low level value of on-state slope resistance
0.51
rt2
High level value of on-state slope resistance
0.45
VTM
Maximum on-state or forward
1.65
V
Ipk = 1500A, TJ = 25°C, t p = 10ms sine pulse
VFM
voltage drop
IH
Maximum holding current
500
mA
TJ = 25°C, anode supply 12V resistive load
IL
Typical latching current
(I > π x IT(AV)), TJ = TJ max.
1000
Switching
Parameter
di/dt
Maximum rate of rise of turned-on
IRK.430..
Units Conditions
1000
A/µs
TJ = TJ max., ITM = 400A, VDRM applied
current
td
Typical delay time
2.0
µs
t
Typical turn-off time
200
µs
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
q
ITM = 750A, TJ = T J max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
2
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
Blocking
Parameter
dv/dt
IRK.430..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 130°C., linear to VD = 80% VDRM
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
3000
V
100
mA
t=1s
TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
IRK.430..
Units Conditions
PGM
Maximum peak gate power
10
W
PG(AV)
Maximum peak average gate power
2.0
W
TJ = TJ max., tp < 5ms
TJ = TJ max., f = 50Hz, d% = 50
+ IGM
Maximum peak positive gate current
3.0
A
TJ = TJ max., tp < 5ms
V
+ V GM
Maximum peak positive gate voltage
20
- VGM
Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
200
mA
TJ = 25°C Vak 12V
VGT
DC gate voltage required to trigger
3.0
V
TJ = 25°C Vak 12V
IGD
DC gate current not to trigger
10
mA
VGD
DC gate voltage not to trigger
0.25
V
TJ = TJ max.
Thermal and Mechanical Specifications
Parameter
IRK.430..
TJ
Max. junction operating temperature range
- 40 to 130
T stg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.065
K/W
0.02
K/W
6-8
Nm
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10% SMAP to heatsink
wt
Approximate weight
busbar to SMAP
Case style
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12 - 15
1500
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
g
SUPER MAGN-A-pak
See outline table
3
IRK.430.. Series
Bulletin I27400 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
IRK
T
430
1
2
3
-
20
4
1
-
Module type
2
-
Circuit configuration (See Circuit Configurations Table)
3
-
Current rating
4
-
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
1
1
~
+
2
3 -
~
~
+
+
2
2
3 -
3 -
4(K1) 7(K2)
4(K1)
7(K2)
5(G1) 6(G2)
5(G1)
6(G2)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
Outline Table
130
IRK.430.. Series
R thJC (DC) = 0.065 K/W
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
100
200
300
400
500
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
All dimensions in millimeters (inches)
130
IRK.430.. Series
R thJC(DC) = 0.065 K/W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
180°
DC
70
0
100
200
300
400
500
600
700
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.430.. Series
180°
120°
90°
60°
30°
600
500
400
RMS Limit
300
Conduction Angle
200
IRK.430.. Series
Per Junction
T J = 130°C
100
0
0
100
200
300
400
1000
Maximum Average On-state Power Loss (W)
700
500
DC
180°
120°
90°
60°
30°
900
800
700
600
500
RMS Limit
400
300
Conduction Period
200
IRK.430.. Series
Per Junction
T J = 130°C
100
0
0
100
200
300
400
500
600
700
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
15000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Bulletin I27400 rev. A 09/97
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J= 130°C
14000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
13000
12000
11000
10000
9000
8000
IRK.430.. Series
Per Junction
7000
6000
1
10
16000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 130°C
No Voltage Reapplied
Rated V RRM
Reapplied
15000
14000
13000
12000
11000
10000
100
9000
8000
7000
IRK.430.. Series
Per Junction
6000
0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
800
=
5K
0 .0
K/
W
/W
R
300
a
elt
-D
0.3
K
0 .4
/W
K/
W
400
K/ W
0.6 K
/
200
W
SA
0.
2
R th
Conduction Angle
500
K/
W
K/
600
0.
16
09
0.
12
180°
120°
90°
60°
30°
700
0.
Maximum Total On-state Power Loss (W)
1
0.1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
W
IRK.430.. Series
Per Module
TJ = 130°C
100
0
0
100
200
300
400
500
600
Total RMS Output Current (A)
700
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
6
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
1.
5
1
W
K/
K/
W
-
2000
K/
W
=
2
SA
180°
(Sine)
180°
(Rect)
2500
h
Rt
D
/W
R
3K
lta
e
Maximum Total Power Loss (W)
3000
1500
5K
1000
2 x IRK.430.. Series
Single Phase Bridge
Connected
T J = 130°C
500
/W
10 K
/W
15 K/
W
0
0
0
100 200 300 400 500 600 700 800 900
Total Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
R
4500
0.
4000
120°
(Rect)
3500
2500
2000
0 .0
3 x IRK.430.. Series
Three Phase Bridge
Connected
T J = 130°C
1000
500
K/
W
=
0.
0
0.
02
K/
W
0.0
3K
/W
3000
1500
01
SA
th
Maximum Total Power Loss (W)
5000
05
K/
W
-D
el
ta
R
5K
/W
0.1 K/
W
0.2 K /W
0
0
200
400
600
800 1000 1200 1400
0
Total Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
Transient Thermal Impedance Z thJC(K/W)
Instantaneous On-state Current (A)
10000
T J= 25°C
T J= 130°C
1000
IRK.430.. Series
Per Junction
100
0.5
1
1.5
2
2.5
3
3.5
0.1
IRK.430.. Series
Per Junction
0.01
Steady State Value:
R thJC = 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 10 - On-state Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
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IRK.430.. Series
Bulletin I27400 rev. A 09/97
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
Tj=-40 °C
1
Tj=25 °C
Tj=130 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
IRK.430.. Series
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
8
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