IRF HFA12PA120C Ultrafast, soft recovery diode Datasheet

PD -2.362 rev. C 01/2000
HFA12PA120C
TM
HEXFRED
Ultrafast, Soft Recovery Diode
Features
VR = 1200V
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Guaranteed Avalanche
• Specified at Operating Conditions
VF(typ.)* = 2.4V
IF(AV) = 6A
Qrr (typ.)= 116nC
IRRM(typ.) = 4.4A
trr (typ.) = 26ns
di(rec)M/dt (typ.)* = 100A/µs
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
TO-247AC
Description
International Rectifier's HFA12PA120C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
results in performance which is unsurpassed by any rectifier previously available. The
HFA12PA120C has basic ratings of 1200 volts and 6 amps per leg continuous current.
In addition to ultra fast recovery time, the HEXFRED product line features extremely
low values of peak recovery current (IRRM) and does not exhibit any tendency to "snapoff" during the tb portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower switching losses in both
the diode and the switching transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA12PA120C is ideally suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS systems, and power factor
correction circuits), motor drives, and many other similar applications where high
speed, high efficiency is needed.
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
6.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
* 125°C
1
HFA12PA120C
PD-2.362 rev. C 01/2000
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
Cathode Anode Breakdown
Min. Typ. Max. Units
1200 ––– –––
V
Test Conditions
IR = 100µA
Voltage
VFM
Max. Forward Voltage
IRM
Max. Reverse Leakage Current
–––
2.7
3.0
–––
3.5
3.9
–––
2.4
2.8
–––
0.26 5.0
IF = 6.0A
V
IF = 6.0A, TJ = 125°C
µA
–––
110
IF = 12A
500
VR = VR Rated
TJ = 125°C, VR = 0.8 x VR RatedD R
CT
Junction Capacitance
–––
9.0
14
pF
VR = 200V
LS
Series Inductance
–––
8.0
–––
nH
Measured lead to lead 5mm from pkg body
Rated
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
Reverse Recovery Time
trr1
trr2
IRRM1
Peak Recovery Current
IRRM2
Qrr1
Reverse Recovery Charge
Min. Typ. Max. Units
–––
26
–––
–––
53
80
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
ns
TJ = 25°C
–––
87
130
TJ = 125°C
–––
4.4
8.0
TJ = 25°C
–––
5.0
9.0
–––
116
320
A
IF = 6.0A
TJ = 125°C
nC
Qrr2
Test Conditions
TJ = 25°C
–––
233
585
TJ = 125°C
di(rec)M/dt1
Peak Rate of Recovery
–––
180
–––
TJ = 25°C
di(rec)M/dt2
Current During t b
–––
100
–––
A/µs
VR = 200V
dif/dt = 200A/µs
TJ = 125°C
Thermal - Mechanical Characteristics
T lead
Q
RthJC
RthJA
R
Parameter
Min.
Typ.
Max.
Units
Lead Temperature
––––
––––
300
°C
Thermal Resistance, Junction to Case
––––
––––
2.0
Thermal Resistance, Junction to Ambient
––––
––––
80
RthCS S
Thermal Resistance, Case to Heat Sink
––––
0.5
––––
Wt
Weight
––––
2.0
––––
g
––––
0.07
––––
(oz)
6.0
––––
12
Kg-cm
5.0
––––
10
lbf•in
Mounting Torque
Q 0.063 in. from Case (1.6mm) for 10 sec
R Typical Socket Mount
S Mounting Surface, Flat, Smooth and Greased
2
K/W
HFA12PA120C
PD-2.362 rev. C 01/2000
100
1000
Reverse Current - IR (µA)
TJ = 150˚C
125˚C
100˚C
10
1
25˚C
0.1
0.01
0
200 400 600 800 1000 1200 1400
Reverse Voltage - VR (V)
100
1
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
10
100
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
0.1
T = 25˚C
J
10
1
0
2
4
Forward Voltage Drop - VFM (V)
6
1
10
100
1000
10000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance ZthJC (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
0.1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = 1t / t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA12PA120C
PD-2.362 rev. C 01/2000
25
110
IF = 6 A
IF = 4 A
100
VR = 200V
TJ = 125˚C
TJ = 25˚C
20
90
IF = 6 A
IF = 4 A
15
70
Irr - ( A)
trr - ( nC )
80
60
10
50
40
5
VR = 200V
TJ = 125˚C
TJ = 25˚C
30
20
100
0
100
1000
1000
dif /dt - (A/µs )
dif /dt - (A/µs )
Fig. 5 - Typical Reverse Recovery
Vs. dif /dt
Fig. 6 - Typical Recovery Current
Vs. dif /dt
10000
1000
VR = 200V
TJ = 125˚C
TJ = 25˚C
800
di(REC) M/dt - (A/µs )
Qrr - ( nC )
IF = 6 A
IF = 4 A
600
400
IF = 6 A
IF = 4 A
1000
100
VR = 200V
TJ = 125˚C
TJ = 25˚C
200
0
100
1000
dif /dt - (A/µs )
Fig. 8 - Typical Stored Charge vs. dif /dt
4
10
100
1000
dif /dt - (A/µs )
Fig. 7 - Typical di(REC) M/dt vs. dif /dt
HFA12PA120C
PD-2.362 rev. C 01/2000
R E V E R S E R E C O V E R Y C IR C U IT
V R = 200V
0 .0 1 Ω
L = 70µ H
D .U .T .
d if/d t
A D JU S T
D
IR F P 2 5 0
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t rr
IF
tb
ta
0
Q rr
2
I RR M
4
0 .5 I R R M
d i(re c )M /d t
5
0 .7 5 I R R M
1
1. dif/dt - Rate of change of
current
through zero
crossing
2. IRRM - Peak reverse
recovery current
d i f /d t
4. Qrr - Area under curve
defined by trr and I RRM
t rr X IRRM
3. trr - Reverse recovery
Qrr =
time measured
from zero
2
crossing point of negative
going IF to point where a line 5. di(rec)M/dt - Peak rate of
passing through 0.75 IRRM
change of current during tb
and 0.50 IRRM
portion of t rr
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
5
HFA12PA120C
PD-2.362 rev. C 01/2000
Outline Table
3 . 6 5 ( 0 . 14 4 )
1 5 . 9 0 ( 0 .6 2 6 )
3 . 5 5 ( 0 .1 3 9 )
5 . 3 0 ( 0 .2 0 9 )
D IA .
4 .7 0 ( 0 .1 8 5 )
1 5 . 3 0 ( 0 .6 0 2 )
2. 5 ( 0. 09 8 )
1 .5 ( 0 .0 5 9 )
5 . 7 0 ( 0 . 22 5 )
5 . 3 0 ( 0 .2 0 8 )
2 0 .3 0 ( 0 . 8 0 0 )
1 9 .7 0 ( 0 . 7 7 5 )
5 . 5 0 ( 0 .2 1 7 )
4 . 5 0 ( 0 .1 7 7 )
1
2
( 2 P L C S .)
3
1 4 . 80 ( 0 . 58 3 )
4 . 3 0 ( 0 .1 7 0 )
1 4 . 20 ( 0 . 55 9 )
3.70 (0.145)
2 . 2 0 ( 0 .0 8 7 )
1 . 4 0 ( 0 .0 5 6 )
2 . 40 ( 0 . 09 5 )
M AX.
M AX.
1 . 0 0 ( 0 .0 3 9 )
0 .8 0 ( 0 .0 3 2 )
0 . 4 0 ( 0 .2 1 3 )
1 0 . 9 4 ( 0 .4 3 0 )
1 0 .8 6 ( 0 .4 2 7 )
Conforms to JEDEC Outline TO-247AC
Dimensions in millimeters and inches
Ordering Information Table
Device Code
1
-
Hexfred Family
2
-
Process Designator
HF
A
12
1
2
3
PA 120
4
5
A = A subs. elec. irrad.
B = B subs. Platinum
6
3
-
Average Current: Code 12 = 12 AMPS
4
-
Package Outline: Code PA = TO-247 3 Lead
5
-
Voltage code : Code 120 = 1200 V
6
-
Configuration : Code C = Center Tap Common Cathode
C
6
HFA12PA120C
PD-2.362 rev. C 01/2000
WORLD HEADQUARTERS:
EUROPEAN HEADQUARTERS:
IR CANADA:
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IR ITALY:
IR FAR EAST:
IR SOUTHEAST ASIA:
IR TAIWAN:
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7
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