Renesas H5N5012P Silicon n channel mos fet high speed power switching Datasheet

H5N5012P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0378-0200Z
Rev.2.00
Jun.17.2004
Features
•
•
•
•
Low on-resistance
Low leakage current
High speed switching
Built-in fast recovery diode
Outline
TO-3P
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00, Jun.17.2004, page 1 of 3
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
25
100
25
7
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
H5N5012P
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Rev.2.00, Jun.17.2004, page 2 of 3
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
500
—
—
1.5
13
—
Typ
—
—
—
—
23
0.180
Max
—
10
±0.1
4.0
—
0.225
Unit
V
µA
µA
V
S
Ω
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VDS = 10 V Note4
ID = 12.5 A, VGS = 10 VNote4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
3600
385
95
40
100
270
150
145
20
70
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ID = 12.5 A
VGS = 10 V
RL = 20 Ω
Rg = 10 Ω
VDF
trr
Qrr
—
—
—
1.0
170
1.0
1.5
—
—
V
ns
µC
IF = 25 A, VGS = 0 Note4
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 400 V
VGS = 10 V
ID = 25 A
H5N5012P
Package Dimensions
15.6 ± 0.3
Unit: mm
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Ordering Information
Part Name
H5N5012P-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Jun.17.2004, page 3 of 3
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