Sanyo ECH8504 Pnp epitaxial planar silicon transistor motor drive application Datasheet

ECH8504
Ordering number : ENA1681
SANYO Semiconductors
DATA SHEET
ECH8504
PNP Epitaxial Planar Silicon Transistor
Motor Drive Applications
Features
•
•
•
Composite type, facilitating high-density mounting.
Mounting height 0.9mm.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
-100
V
-100
V
VEBO
IC
-7
V
-3
A
ICP
IB
Base Current
Collector Dissipation
Unit
VCBO
VCEO
Total Dissipation
PC
PT
Junction Temperature
Tj
Storage Temperature
Tstg
-6
A
-600
mA
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (900mm2×0.8mm)
1.6
W
150
°C
-55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-008
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
Top View
Taping Type : TL
0.25
2.9
Marking
0.15
8
5
MD
2.3
4
1
0.65
Bot t om View
Lot No.
Electrical Connection
0.3
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
0.9
0.25
TL
0.07
2.8
0 t o 0.02
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
51910EA TK IM TC-00002335 No. A1681-1/4
ECH8504
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
VCE= -5V, IC= -100mA
VCE= -10V, IC= -500mA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Unit
max
200
-1
μA
-1
μA
560
250
MHz
28
IC= -1A, IB= -100mA
pF
-75
-130
mV
-0.85
-1.2
V
V(BR)CBO
V(BR)CEO
IC= -10μA, IE=0A
-100
IC= -1mA, RBE=∞
-100
V
V(BR)EBO
ton
IE= -10μA, IC=0A
-7
V
tstg
tf
Fall Time
typ
VCB= -10V, f=1MHz
IC= -1A, IB= -100mA
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
min
VCB= -80V, IE=0A
VEB= -4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
V
See specified Test Circuit.
25
See specified Test Circuit.
420
ns
ns
See specified Test Circuit.
20
ns
Note) The specifications shown above are for each individual transistor.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
VOUT
IB2
INPUT
RB
VR
50Ω
RL
+
+
100μF
470μF
VBE=5V
VCC= --50V
IC= --10IB1=10IB2= --1A
--0.6
--1.8
A
--10m
--8mA
--6mA
6
--1
--0.5
--4mA
--2mA
A
--0.4
mA
--14
--0.3
--12m
--0.2
A
0m
--7
mA
0
--5
mA
--20mA
--30
--10mA
--6mA
--4mA
--1.4
--1.2
A
--8m
--1.0
--2mA
--0.8
--0.6
--0.4
--0.2
--0.1
0
--1.6
IC -- VCE
--100mA
m
mA
m
--18
Collector Current, IC -- A
--0.7
A --2
--3
0
50mA
A --70mA --
--0.8
--2.0
0mA
--100m
Collector Current, IC -- A
--0.9
A
IC -- VCE
--1.0
IB=0mA
0
--0.1
--0.2
--0.3
--0.4
Collector-to-Emitter Voltage, VCE -- V
--0.5
IT15458
0
IB=0mA
0
--1
--2
--3
--4
Collector-to-Emitter Voltage, VCE -- V
--5
IT15459
No. A1681-2/4
ECH8504
IC -- VBE
--3.0
5
DC Current Gain, hFE
25 ° C
--1.0
--25°C
--1.5
Ta=75°
C
Collector Current, IC -- A
--2.0
--0.5
Ta=75°C
3
25°C
--25°C
2
100
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
10
--0.01
--1.2
2
3
5
7 --0.1
2
3
5
7 --1.0
Output Capacitance, Cob -- pF
2
100
7
5
3
2
5
f=1MHz
VCE= --10V
3
3
IT15461
Cob -- VCB
2
5
100
7
5
3
2
10
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
7
--1.0
5
2
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
IT15462
VCE(sat) -- IC
5
VBE(sat) -- IC
3
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
--100
7
25
5
°C
5°C
=7
Ta
5°C
--2
3
2
7 --100
IT15463
IC / IB=10
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
Collector Current, IC -- A
IT15460
f T -- IC
7
Gain-Bandwidth Product, f T -- MHz
VCE= --5V
7
--2.5
0
hFE -- IC
1000
VCE= --5V
2
--1.0
Ta= --25°C
7
75°C
5
25°C
3
--10
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
IC= --3A
--1.0
7
5
3
2
50
0μ
s
s
DC
op
10
0m
era
0μ
s
ms
n(
Ta
=
25
°C
)
--0.1
7
5
3
2
--0.01
7
5
3 Ta=25°C
2 Single pulse
--0.001
--0.1 2 3 5 7 --1.0
5
7 --0.1
2
3
5
7 --1.0
2
3
5
IT15465
PC -- Ta
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
10
10
s
tio
3
1.8
ICP= --6A
1m
2
Collector Current, IC -- A
Collector Dissipation, PC -- W
Collector Current, IC -- A
--10
7
5
3
2
2
--0.01
5
IT15464
Forward Bias A S O
2
3
1.4
1.3
1.2
To
t
al
1.0
Di
ss
ip
nit atio
1u
0.8
n
0.6
0.4
0.2
2
3
5 7 --10
2
3
Collector-to-Emitter Voltage, VCE --
5 7--100 2
V IT15466
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15457
No. A1681-3/4
ECH8504
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PS No. A1681-4/4
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