MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features •Small Compact Surface Mountable Package with J-Bend Leads •Rectangular Package for Automated Handling •Highly Stable Oxide Passivated Junction •Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C) •Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guardring for Stress Protection •Pb-Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS SMB CASE 403A PLASTIC Mechanical Characteristics •Case: Epoxy, Molded •Weight: 95 mg (approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable AYWW B13G G •Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Shipped in 12 mm Tape and Reel, 2500 units per reel •Cathode Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (TL = 115°C) IF(AV) 1.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Operating Junction Temperature ORDERING INFORMATION TJ °C -65 to +125 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction-to-Lead (TL = 25°C) RqJL 12 °C/W August, 2007 - Rev. 7 Device MBRS130T3 MBRS130T3G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2007 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 1 Package Shipping† SMB 2500/Tape & Reel SMB (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRS130T3/D MBRS130T3 ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF 0.6 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR mA 1.0 10 1 0.7 0.5 TC = 100°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 TC = 25°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 TJ = 125°C 100°C 75°C 25°C 0 4 8 12 16 20 24 28 32 36 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 40 200 180 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF C, CAPACITANCE (pF) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 10 RATED VOLTAGE APPLIED RqJC = 12°C/W TJ = 125°C 9 8 7 6 5 4 DC 3 SQUARE WAVE 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (°C) 110 120 130 5 DC SQUARE WAVE TJ = 125°C 4 π 5 3 CAPACITANCE LOAD 2 IPK IAV 10 = 20 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 2 5 MBRS130T3 PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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