IXYS IXTH10P50P Polarptm power mosfets p-channel enhancement mode avalanche rated Datasheet

PolarPTM
Power MOSFETs
IXTA10P50P
IXTP10P50P
IXTQ10P50P
IXTH10P50P
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
VDSS
ID25
RDS(on)
G
D (Tab)
G
D
DS
D (Tab)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
- 500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 500
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
- 10
A
IDM
TC = 25°C, Pulse Width Limited by TJM
- 30
A
IA
EAS
TC = 25°C
TC = 25°C
- 10
1.5
A
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-3P,TO-220 & TO-247)
Weight
TO-263
TO-220
TO-3P
TO-247
300
260
°C
°C
1.13/10
Nm/lb.in.
2.5
3.0
5.5
6.0
g
g
g
g
G
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = - 250μA
- 500
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
IGSS
VGS = ±20V, VDS = 0V
±100 nA
IDSS
VDS = VDSS, VGS = 0V
- 10 μA
- 250 μA
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
© 2012 IXYS CORPORATION, All Rights Reserved
V
1
V
D
S
D (Tab)
D
= Drain
Tab = Drain
Features
z
z
z
z
z
International Standard Packages
Avalanche Rated
Rugged PolarPTM Process
Low Package Inductance
Fast Intrinsic Diode
Advantages
z
TJ = 125°C
D (Tab)
G = Gate
S = Source
z
- 4.0
S
TO-247 (IXTH)
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
- 500V
- 10A
Ω
1Ω
TO-3P (IXTQ)
TO-220AB (IXTP)
G
S
=
=
≤
Easy to Mount
Space Savings
High Power Density
Applications
z
z
z
z
z
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Ω
DS99911C(12/12)
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
6.5
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
11
S
2840
pF
275
pF
42
pF
20
ns
28
ns
52
ns
44
ns
50
nC
17
nC
18
nC
VGS = 0V, VDS = - 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25
td(off)
RG = 3.3Ω (External)
tf
Qg(on)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgs
Qgd
0.42 °C/W
RthJC
RthCS
(TO-3P & TO-247)
0.25
°C/W
(TO-220)
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
- 10
A
ISM
Repetitive, Pulse Width Limited by TJM
- 40
A
VSD
IF = - 5A, VGS = 0V, Note 1
-3
V
trr
QRM
IRM
IF = - 5A, -di/dt = -100A/μs
Note
414
5.90
- 28.6
VR = -100V, VGS = 0V
1:
ns
μC
A
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅P
1
2
3
e
Terminals: 1 - Gate
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins:
1 - Gate
2 - Drain
© 2012 IXYS CORPORATION, All Rights Reserved
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
-10
-26
VGS = -10V
- 7V
-9
VGS = -10V
- 8V
-22
-8
-18
ID - Amperes
ID - Amperes
-7
- 6V
-6
-5
-4
- 7V
-14
- 6V
-10
-3
-2
-6
- 5V
- 5V
-1
-2
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
-8
-12
-16
-20
-24
-28
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = - 5A Value vs.
Junction Temperature
-10
-32
2.6
VGS = -10V
- 7V
-9
VGS = -10V
2.2
R DS(on) - Normalized
-8
ID - Amperes
-4
VDS - Volts
-7
- 6V
-6
-5
-4
-3
- 5V
-2
1.8
I D = -10A
I D = - 5A
1.4
1.0
0.6
-1
0
0.2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = - 5A Value vs.
Drain Current
75
100
125
150
125
150
-11
VGS = -10V
-9
TJ = 125ºC
2.0
ID - Amperes
R DS(on) - Normalized
50
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
2.2
25
TJ - Degrees Centigrade
1.8
1.6
1.4
-7
-5
-3
1.2
TJ = 25ºC
1.0
-1
0.8
-2
-6
-10
-14
-18
-22
-26
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-50
-25
0
25
50
75
Tc - Degrees Centigrade
100
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 7. Input Admittance
Fig. 8. Transconductance
24
-16
TJ = - 40ºC
-14
20
-12
-8
g f s - Siemens
ID - Amperes
16
-10
TJ = 125ºC
25ºC
- 40ºC
-6
25ºC
12
125ºC
8
-4
4
-2
0
-3.5
0
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-2
-4
-6
VGS - Volts
-8
-10
-12
-14
-16
-18
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-30
-10
-25
-9
VDS = - 250V
-8
I D = - 5A
I G = -1mA
-7
VGS - Volts
IS - Amperes
-20
-15
TJ = 125ºC
-10
-6
-5
-4
-3
TJ = 25ºC
-2
-5
-1
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0
-3.5
5
10
15
20
25
30
35
40
45
50
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
- 100
Capacitance - PicoFarads
f = 1 MHz
RDS(on) Limit
25µs
Ciss
1,000
- 10
ID - Amperes
100µs
Coss
100
1ms
10ms
-1
DC
100ms
TJ = 150ºC
TC = 25ºC
Single Pulse
Crss
- 0.1
10
0
-5
-10
-15
-20
-25
VDS - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
-30
-35
-40
-10
- 100
VDS - Volts
- 1000
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 13. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_10P50P(B5)5-21-08-B
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