Pan Jit BAV199W Surface mount, low leakage switching diode Datasheet

DATA SHEET
BAS116W/BAW156W/BAV170W/BAV199W
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE
100 Volts
POWER
SOT-323
200mWatts
Unit: inch (mm)
.087(2.2)
.070(1.8)
.087(2.2)
.078(2.0)
Suface mount package ideally suited for automatic insertion.
Very low leakage current. 2pA typical at VR=75V.
Low capacitance. 4pF max at VR=0V, f=1MHz
In compliance with EU RoHS 2002/95/EC directives
.054(1.35)
.045(1.15)
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
MECHANICAL DATA
.004(.10)MAX.
• Case: SOT-323 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
.016(.40)
.008(.20)
.044(1.1)
.035(0.9)
•
•
•
•
.004(.10)MIN.
FEATURES
• Approx weight: 0.0052 gram
• Marking: BAS116W :PA,BAW156W :P4,BAV170W :P3,BAV199W :PB
ABSOLUTE RATINGS (each diode)
P A R A M E TE R
S ym b o l
V a lu e
U n its
VR
75
V
V RM
100
V
IF
0 .2
A
I FS M
4 .0
A
S ym b o l
V a lu e
U n its
P o w e r D is s ip a tio n (N o te 1 )
P TO T
200
m W
T h e rm a l R e s is ta n c e , J u n c tio n to A m b ie n t (N o te 1 )
R θ JA
625
J u n c tio n Te m p e ra tu re
TJ
-5 5 to 1 5 0
O
C
S to ra g e Te m p e ra tu re
T S TG
-5 5 to 1 5 0
O
C
R e ve rs e V o lta g e
P e a k R e ve rs e V o lta g e
C o n tin u o u s F o rw a rd C u rre n t
N o n -re p e titive P e a k F o rw a rd S u rg e C u rre n t a t t= 1 .0 u s
THERMAL CHARACTERISTICS
P A R A M E TE R
NOTE:
O
C /W
SINGLE
COMMON ANODE
COMMON CATHODE
SERIES
3
3
3
3
1. FR-4 Board = 70 x 60 x 1mm.
1
2
BAS116W
REV.0.0-DEC.19.2008
1
2
BAW156W
1
2
BAV170W
1
2
BAV199W
PAGE . 1
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)
P A R A M E TE R
S ym b o l
R e ve rs e B re a k d o w n V o lta g e
V (B R )
Te s t C o n d itio n
M IN .
IR = 1 0 0 uA
TYP.
M AX.
U n its
75
R e ve rs e C u rre n t
IR
V R =75 V
V R = 7 5 V ,T J = 1 5 0
F o rw a rd V o lta g e
VF
IF = 1 m A
IF = 1 0 m A
IF = 5 0 m A
IF = 1 5 0 m A
To ta l C a p a c ita n c e
CT
R e ve rs e R e c o ve ry T im e
TR R
V
5
80
nA
0 .9
1 .0
1 .1
1 .2 5
V
V R = 0 V , f= 1 M H Z
2 .0
pF
IF = IR = 1 0 m A , R L = 1 0 0 Ω
3 .0
us
O
0 .0 0 2
8 .0
C
CHARACTERISTIC CURVES (each diode)
1000
I F , Forward current (mA)
I R , Reverse Leakage(nA)
10
1.0
0.1
V R =75V
0.01
100
O
T A =-25 C
10
O
T A =75 C
1.0
O
O
T A =125 C
0.001
0
50
100
150
200
0.1
0.2
0.4
0.6
T A =25 C
0.8
1.0
1.2
V F , Forward Voltage (V)
Tj, Junction Temperature (Deg C)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
C T , Total Capacitance (pF)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V R , Reverse Voltage (V)
Fig. 3- Total capacitance vs. Reverse Voltage
REV.0.0-DEC.19.2008
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-DEC.19.2008
PAGE . 3
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