Rohm MPSA06 Npn general purpose transistor Datasheet

SSTA06 / MMSTA06 / MPSA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06 / MPSA06
!External dimensions (Units : mm)
!Features
1) BVCEO < 80V.( IC=1mA)
2) Complements the SSTA56 / MMSTA56 / MPSA56.
SSTA06
2.9±0.2
0.95 +0.2
−0.1
1.9±0.2
0.45±0.1
0.95 0.95
(2)
1.3+0.2
−0.1
!Package, marking and packaging specifications
Part No.
SSTA06
MMSTA06
MPSA06
Packaging type
SST3
R1G
SMT3
R1G
TO-92
-
T116
T146
T93
3000
3000
3000
0.2Min.
(3)
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
ROHM : SST3
MMSTA06
2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
Collector power SSTA06, MMSTA06
dissipation
MPSA06
Junction temperature
Unit
80
80
4
0.5
V
V
V
A
VEBO
IC
0.2
PC
Tj
0.625
150
Tstg
-55~+150
2.8±0.2
1.6 +0.2
−0.1
Limits
VCBO
VCEO
(3)
0.4 +0.1
−0.05
+0.1
0.15 −0.06
All terminals have same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
W
˚C
˚C
MPSA06
4.8±0.2
3.7±0.2
(12.7Min.)
2.5Min.
Storage temperature
Symbol
0~0.1
4.8±0.2
Parameter
(2)
(1)
!Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
(1) Emitter
(2) Base
(3) Collector
0.3~0.6
Mark
Code
Basic ordering unit (pieces)
0~0.1
2.4±0.2
(1)
0.5±0.1
(1)
ROHM : TO-92
EIAJ : SC-43
(2)
(3)
2.5 +0.3
−0.1
5
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
4
80
-
-
V
V
IC=100µA
IC=1mA
ICBO
-
-
-
-
0.1
1
µA
VCB=80V
Collector-emitter saturation voltage
ICEO
VCE(sat)
-
-
0.25
V
IC/IB=100mA/10mA
Base-emitter saturation voltage
VBE(ON)
-
-
1.2
V
VCE/IB=1V/100mA
100
-
-
100
-
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
DC current transfer ratio
hFE
Transition frequency
fT
100
-
MHz
Conditions
VCE=60V
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=2V, IE= −10mA, f=100MHz
0.45±0.1
2.3
(1) Emitter
(2) Base
(3) Collector
SSTA06 / MMSTA06 / MPSA06
Transistors
COLLECTOR CURRENT : IC (mA)
100
Ta=25˚C 500µA
450µA
400µA
80
350µA
300µA
60
250µA
200µA
40
150µA
100µA
20
50µA
IB=0µA
0
0
5.0
1.0
2.0
3.0
4.0
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristics curves
Ta=25˚C
IC / IB=10
0.3
0.2
Ta=125˚C
0.1
25˚C
0
−40˚C
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.1 Grounded emitter output
characteristics
1000
DC CURRENT GAIN : hFE
Ta=25˚C
5V
VCE=10V
100
3V
1V
10
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
1000
1000
Ta=25˚C
VCE=5V
DC CURRENT GAIN : hFE
Ta=125˚C
25˚C
−40˚C
100
10
0.1
1.0
10
COLLECTOR CURRENT IC : (mA)
100
Fig.4 DC current gain vs. collector current ( II )
1000
ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)
Fig.3 DC current gain vs. collector current ( I )
1.8
Ta=25˚C
IC / IB=10
1.6
1.4
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
0.4
0.2
0
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
SSTA06 / MMSTA06 / MPSA06
Transistors
Cib
Ta=25˚C
f=1MHz
1.4
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
Cob
10
0.2
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Grounded emitter propagation
characteristics
0.5
1
2
5
10
20
REVERSE BIAS VOLTAGE (V)
Ta=25˚C
VCE=5V
100
0.4
0
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
Ta=25˚C
VCE=5V
1.6
CAPACITANCE (pF)
BASE EMITTER VOLTAGE : VBE(ON) (V)
1000
100
1.8
50
Fig.7 Input / output capacitance
vs. voltage
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
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