BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage VCBO −50 V Emitter - Base Voltage VEBO −5.0 V IC −500 mAdc Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 EMITTER MARKING DIAGRAM SOT−23 CASE 318 STYLE 6 1 2 Symbol Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature xxx PD Thermal Resistance, Junction−to−Ambient xxxD 1 THERMAL CHARACTERISTICS Characteristic 3 3 D 2 = 5A (BC807−16LT1) 5B1 (BC807−25LT1) 5C (BC807−40LT1) = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 5 1 Publication Order Number: BC807−16LT1/D BC807−16LT1, BC807−25LT1, BC807−40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 A) V(BR)CES −50 − − V Emitter −Base Breakdown Voltage (IE = −1.0 A) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA A 100 160 250 40 − − − − 250 400 600 − OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) hFE BC807−16 BC807−25 BC807−40 (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 −0.7 pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) DEVICE ORDERING INFORMATION Package Shipping† BC807−16LT1 SOT−23 3,000 Tape & Reel BC807−16LT3 SOT−23 10,000 Tape & Reel BC807−25LT1 SOT−23 Device SOT−23 (Pb−Free) 3,000 Tape & Reel BC807−25LT3 SOT−23 10,000 Tape & Reel BC807−40LT1 SOT−23 BC807−25LT1G BC807−40LT1G BC807−40LT3 BC807−40LT3G SOT−23 (Pb−Free) 3,000 Tape & Reel SOT−23 SOT−23 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC807−16LT1, BC807−25LT1, BC807−40LT1 1000 hFE, DC CURRENT GAIN VCE = −1.0 V TA = 25°C 100 10 −0.1 −1.0 −10 −100 IC, COLLECTOR CURRENT (mA) −1000 −1.0 −1.0 TA = 25°C TJ = 25°C −0.8 −0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = −500 mA −0.6 −0.4 IC = −300 mA −0.2 −1.0 −10 IB, BASE CURRENT (mA) −0.6 −0.4 VCE(sat) @ IC/IB = 10 IC = −10 mA −0.1 VBE(on) @ VCE = −1.0 V −0.2 IC = −100 mA 0 −0.01 0 −1.0 −100 VC for VCE(sat) −1.0 −1.0 −1000 100 +1.0 −2.0 −10 −100 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 2. Saturation Region 0 VBE(sat) @ IC/IB = 10 VB for VBE −10 −100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 −0.1 −1000 Figure 4. Temperature Coefficients −1.0 −10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 3 −100 BC807−16LT1, BC807−25LT1, BC807−40LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AI NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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