DIODES ZXMN3F318DN8TA

Part no.
ZXMN3F318DN8
30V SO8 Asymmetrical dual N-channel enhancement mode
MOSFET
Summary
Device
V(BR)DSS QG (nC)
Q1
Q2
30
RDS(on) (Ω)
ID (A)
0.024 @ VGS= 10V
7.3
0.039 @ VGS= 4.5V
5.7
0.035 @ VGS= 10V
6
0.055 @ VGS= 4.5V
4.8
12.9
30
9
Description
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
with low (4.5V) gate drive.
Features
•
Low on-resistance
•
4.5V gate drive capability
•
Low profile SOIC package
Applications
•
DC-DC Converters
•
SMPS
•
Load switching
•
Motor control
•
Backlighting
Q2
Q1
Ordering information
Device
ZXMN3F318DN8TA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
500
Device marking
Pinout – top view
ZXMN
3F318
Issue 1 – March 2008
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1
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ZXMN3F318DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
LIMIT
Q1
Q2
UNIT
Drain-Source Voltage
VDSS
30
30
V
Gate-Source Voltage
VGS
± 20
± 20
V
Continuous Drain Current VGS=10V; TA=25°C (b)
ID
7.3
6
A
VGS=10V; TA=70°C (b)
5.9
4.8
VGS=10V; TA=25°C (a)
5.7
4.6
Pulsed Drain Current (c)
IDM
33
25
A
Continuous Source Current (Body Diode) (b)
IS
3.5
3.3
A
Pulsed Source Current (Body Diode) (c)
ISM
33
25
A
Power Dissipation at TA =25°C (a) (d)
PD
Linear Derating Factor
PD
Power Dissipation at TA =25°C (a) (e)
Linear Derating Factor
PD
Power Dissipation at TA =25°C (b) (d)
Linear Derating Factor
Operating and Storage Temperature Range
Tj, Tstg
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a) (d)
RθJA
100
°C/W
Junction to Ambient (a) (e)
RθJA
70
°C/W
Junction to Ambient (b) (d)
RθJA
60
°C/W
Junction to Lead (f)
RθJL
53
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz
copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by
maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 – March 2008
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2
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ZXMN3F318DN8
Q1 Thermal Characteristics
100
Max Power Dissipation (W)
ID Drain Current (A)
RDS(on)
10 Limited
1
DC
100m
1s
100ms
10m
1m
100m
10ms
Single Pulse
Tamb=25°C
1ms
100µs
One active die
1
10
VDS Drain-Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
Maximum Power (W)
Thermal Resistance (°C/W)
Single Pulse
D=0.1
10
100
1k
Single Pulse
T amb=25°C
One active die
10
1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
© Zetex Semiconductors plc 2008
100 120 140 160
100
100µ
Pulse Width (s)
Issue 1 – March 2008
80
Derating Curve
D=0.05
1
60
Temperature (°C)
Safe Operating Area
110
T amb=25°C
100
One active die
90
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m 10m 100m
40
Pulse Power Dissipation
3
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ZXMN3F318DN8
Q1 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
30
Zero Gate Voltage Drain Current
IDSS
0.5
μA
Gate-Body Leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
3.0
V
ID= 250μA, VDS=VGS
Static Drain-Source On-State
Resistance (1)
RDS(on)
0.024
Ω
0.039
Ω
STATIC
Forward Transconductance (1) (3)
V
1.0
ID= 250μA, VGS=0V
VDS= 30V, VGS=0V
VGS= 10V, ID= 7.0A
VGS= 4.5V, ID = 6.0A
gfs
16.5
S
VDS= 15V, ID= 7A
Input Capacitance
Ciss
608
pF
VDS= 15V, VGS=0V
Output Capacitance
Coss
132
pF
f=1MHz
Reverse Transfer Capacitance
Crss
71
pF
Turn-On-Delay Time
td(on)
2.9
ns
VDD= 15V, ID= 1A
Rise Time
tr
3.3
ns
RG≅6.0Ω, VGS= 10V
Turn-Off Delay Time
td(off)
16
ns
Fall Time
tf
8
ns
Total Gate Charge
Qg
12.9
nC
VDS= 15V, VGS= 10V
Gate-Source Charge
Qgs
2.5
nC
ID= 7A
Gate Drain Charge
Qgd
2.52
nC
VSD
0.82
DYNAMIC (3)
SWITCHING (2) (3)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
1.2
V
Tj=25°C, IS= 1.7A,
VGS=0V
Reverse Recovery Time (3)
trr
12
ns
Tj=25°C, IS= 2.2A,
Reverse Recovery Charge (3)
Qrr
4.8
nC
di/dt=100A/µs
(1)
(2)
(3)
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
Issue 1 – March 2008
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ZXMN3F318DN8
Q1 Typical Characteristics
5V
10
ID Drain Current (A)
T = 150°C
4V
3.5V
3V
1
0.1
2.5V
VGS
T = 25°C
0.01
0.1
1
10V
VGS
4V
3.5V
10
ID Drain Current (A)
10V
3V
2.5V
1
2V
0.1
1.5V
0.01
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
ID Drain Current (A)
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2
3
4
VGS Gate-Source Voltage (V)
1000
2.5V
VGS
T = 25°C
100
3V
10
3.5V
1
4V
0.1
0.01
0.01
4.5V
10V
0.1
1
VGS = 10V
1.4
ID = 7A
RDS(on)
1.2
1.0
0.8
VGS(th)
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (W)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1.6
10
10
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = -3V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
On-Resistance v Drain Current
Q1 Typical Characteristics
Issue 1 – March 2008
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ZXMN3F318DN8
VGS = 0V
800
C Capacitance (pF)
VGS Gate-Source Voltage (V)
900
f = 1MHz
700
600
500
CISS
COSS
400
CRSS
300
200
100
0
1
10
10
9
8
7
6
5
4
3
2
1
0
ID = 7A
VDS = 15V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Issue 1 – March 2008
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ZXMN3F318DN8
Q2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
30
Zero Gate Voltage Drain Current
IDSS
0.5
μA
Gate-Body Leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
3.0
V
ID= 250μA, VDS=VGS
Static Drain-Source On-State
Resistance (1)
RDS(on)
0.035
Ω
0.055
Ω
STATIC
Forward Transconductance (1) (3)
V
1.0
ID= 250μA, VGS=0V
VDS= 30V, VGS=0V
VGS= 10V, ID= 5.0A
VGS= 4.5V, ID = 4A
gfs
11.8
S
VDS= 15V, ID= 5A
Input Capacitance
Ciss
430
pF
VDS= 15V, VGS=0V
Output Capacitance
Coss
101
pF
f=1MHz
Reverse Transfer Capacitance
Crss
56
pF
Turn-On-Delay Time
td(on)
2.5
ns
VDD= 15V, ID= 1A
Rise Time
tr
3.3
ns
RG≅6.0Ω, VGS= 10V
Turn-Off Delay Time
td(off)
11.5
ns
Fall Time
tf
6.3
ns
Total Gate Charge
Qg
9
nC
VDS= 15V, VGS= 10V
Gate-Source Charge
Qgs
1.7
nC
ID= 5A
Gate Drain Charge
Qgd
2
nC
VSD
0.82
DYNAMIC (3)
SWITCHING (2) (3)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
1.2
V
Tj=25°C, IS= 1.7A,
VGS=0V
Reverse Recovery Time (3)
trr
12
ns
Tj=25°C, IS= 2.1A,
Reverse Recovery Charge (3)
Qrr
4.9
nC
di/dt=100A/µs
1 Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
2 Switching characteristics are independent of operating junction temperature.
3
For design aid only, not subject to production testing.
Issue 1 – March 2008
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ZXMN3F318DN8
Q2 Typical Characteristics
10
T = 150°C
VGS
4.5V
4V
3.5V
1
3V
0.1
T = 25°C
2.5V
2.5V
2V
0.1
1
10
0.1
0.1
T = 25°C
0.01
3
4
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
T = 150°C
ISD Reverse Drain Current (A)
VGS
T = 25°C
100
3V
10
3.5V
1
4V
4.5V
0.1
0.01
0.01
10V
0.1
1
10
On-Resistance v Drain Current
© Zetex Semiconductors plc 2008
VGS = 10V
ID = 5A
1.4
RDS(on)
1.2
1.0
0.8
VGS(th)
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
10
1
T = 150°C
0.1
T = 25°C
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ID Drain Current (A)
Issue 1 – March 2008
1.6
Normalised Curves v Temperature
1000
2.5V
10
Output Characteristics
VDS = 10V
2
1
VDS Drain-Source Voltage (V)
Output Characteristics
ID Drain Current (A)
3.5V
3V
VDS Drain-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
VGS
4V
0.01
0.1
1
4.5V
1
0.01
10
10V
10
ID Drain Current (A)
ID Drain Current (A)
10V
8
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ZXMN3F318DN8
Q2 Typical Characteristics
600
500
400
VGS Gate-Source Voltage (V)
C Capacitance (pF)
VGS = 0V
f = 1MHz
CISS
300
COSS
CRSS
200
100
0
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
10
9
8
7
6
5
4
3
2
1
0
ID = 5A
VDS = 15V
0
1
2
3
4
5
6
Q - Charge (nC)
7
8
9
Gate-Source Voltage v Gate Charge
9
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ZXMN3F318DN8
Packaging details – SO8
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
10
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ZXMN3F318DN8
Intentionally left blank
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
11
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ZXMN3F318DN8
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s
application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc.
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of
these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated . As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when
the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Diodes Zetex is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Diodes Incorporated
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12
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