Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V(BR)DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable with low (4.5V) gate drive. Features • Low on-resistance • 4.5V gate drive capability • Low profile SOIC package Applications • DC-DC Converters • SMPS • Load switching • Motor control • Backlighting Q2 Q1 Ordering information Device ZXMN3F318DN8TA Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 Device marking Pinout – top view ZXMN 3F318 Issue 1 – March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3F318DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT LIMIT Q1 Q2 UNIT Drain-Source Voltage VDSS 30 30 V Gate-Source Voltage VGS ± 20 ± 20 V Continuous Drain Current VGS=10V; TA=25°C (b) ID 7.3 6 A VGS=10V; TA=70°C (b) 5.9 4.8 VGS=10V; TA=25°C (a) 5.7 4.6 Pulsed Drain Current (c) IDM 33 25 A Continuous Source Current (Body Diode) (b) IS 3.5 3.3 A Pulsed Source Current (Body Diode) (c) ISM 33 25 A Power Dissipation at TA =25°C (a) (d) PD Linear Derating Factor PD Power Dissipation at TA =25°C (a) (e) Linear Derating Factor PD Power Dissipation at TA =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range Tj, Tstg 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) (d) RθJA 100 °C/W Junction to Ambient (a) (e) RθJA 70 °C/W Junction to Ambient (b) (d) RθJA 60 °C/W Junction to Lead (f) RθJL 53 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 – March 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXMN3F318DN8 Q1 Thermal Characteristics 100 Max Power Dissipation (W) ID Drain Current (A) RDS(on) 10 Limited 1 DC 100m 1s 100ms 10m 1m 100m 10ms Single Pulse Tamb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 Maximum Power (W) Thermal Resistance (°C/W) Single Pulse D=0.1 10 100 1k Single Pulse T amb=25°C One active die 10 1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance © Zetex Semiconductors plc 2008 100 120 140 160 100 100µ Pulse Width (s) Issue 1 – March 2008 80 Derating Curve D=0.05 1 60 Temperature (°C) Safe Operating Area 110 T amb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 10m 100m 40 Pulse Power Dissipation 3 www.zetex.com ZXMN3F318DN8 Q1 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage V(BR)DSS 30 Zero Gate Voltage Drain Current IDSS 0.5 μA Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source Threshold Voltage VGS(th) 3.0 V ID= 250μA, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.024 Ω 0.039 Ω STATIC Forward Transconductance (1) (3) V 1.0 ID= 250μA, VGS=0V VDS= 30V, VGS=0V VGS= 10V, ID= 7.0A VGS= 4.5V, ID = 6.0A gfs 16.5 S VDS= 15V, ID= 7A Input Capacitance Ciss 608 pF VDS= 15V, VGS=0V Output Capacitance Coss 132 pF f=1MHz Reverse Transfer Capacitance Crss 71 pF Turn-On-Delay Time td(on) 2.9 ns VDD= 15V, ID= 1A Rise Time tr 3.3 ns RG≅6.0Ω, VGS= 10V Turn-Off Delay Time td(off) 16 ns Fall Time tf 8 ns Total Gate Charge Qg 12.9 nC VDS= 15V, VGS= 10V Gate-Source Charge Qgs 2.5 nC ID= 7A Gate Drain Charge Qgd 2.52 nC VSD 0.82 DYNAMIC (3) SWITCHING (2) (3) SOURCE-DRAIN DIODE Diode Forward Voltage (1) 1.2 V Tj=25°C, IS= 1.7A, VGS=0V Reverse Recovery Time (3) trr 12 ns Tj=25°C, IS= 2.2A, Reverse Recovery Charge (3) Qrr 4.8 nC di/dt=100A/µs (1) (2) (3) Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing. Issue 1 – March 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXMN3F318DN8 Q1 Typical Characteristics 5V 10 ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 0.01 0.1 1 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 3V 2.5V 1 2V 0.1 1.5V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 VGS = 10V 1.4 ID = 7A RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ID Drain Current (A) On-Resistance v Drain Current Q1 Typical Characteristics Issue 1 – March 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXMN3F318DN8 VGS = 0V 800 C Capacitance (pF) VGS Gate-Source Voltage (V) 900 f = 1MHz 700 600 500 CISS COSS 400 CRSS 300 200 100 0 1 10 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Test Circuits Issue 1 – March 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXMN3F318DN8 Q2 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage V(BR)DSS 30 Zero Gate Voltage Drain Current IDSS 0.5 μA Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source Threshold Voltage VGS(th) 3.0 V ID= 250μA, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.035 Ω 0.055 Ω STATIC Forward Transconductance (1) (3) V 1.0 ID= 250μA, VGS=0V VDS= 30V, VGS=0V VGS= 10V, ID= 5.0A VGS= 4.5V, ID = 4A gfs 11.8 S VDS= 15V, ID= 5A Input Capacitance Ciss 430 pF VDS= 15V, VGS=0V Output Capacitance Coss 101 pF f=1MHz Reverse Transfer Capacitance Crss 56 pF Turn-On-Delay Time td(on) 2.5 ns VDD= 15V, ID= 1A Rise Time tr 3.3 ns RG≅6.0Ω, VGS= 10V Turn-Off Delay Time td(off) 11.5 ns Fall Time tf 6.3 ns Total Gate Charge Qg 9 nC VDS= 15V, VGS= 10V Gate-Source Charge Qgs 1.7 nC ID= 5A Gate Drain Charge Qgd 2 nC VSD 0.82 DYNAMIC (3) SWITCHING (2) (3) SOURCE-DRAIN DIODE Diode Forward Voltage (1) 1.2 V Tj=25°C, IS= 1.7A, VGS=0V Reverse Recovery Time (3) trr 12 ns Tj=25°C, IS= 2.1A, Reverse Recovery Charge (3) Qrr 4.9 nC di/dt=100A/µs 1 Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 2 Switching characteristics are independent of operating junction temperature. 3 For design aid only, not subject to production testing. Issue 1 – March 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXMN3F318DN8 Q2 Typical Characteristics 10 T = 150°C VGS 4.5V 4V 3.5V 1 3V 0.1 T = 25°C 2.5V 2.5V 2V 0.1 1 10 0.1 0.1 T = 25°C 0.01 3 4 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) T = 150°C ISD Reverse Drain Current (A) VGS T = 25°C 100 3V 10 3.5V 1 4V 4.5V 0.1 0.01 0.01 10V 0.1 1 10 On-Resistance v Drain Current © Zetex Semiconductors plc 2008 VGS = 10V ID = 5A 1.4 RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 10 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ID Drain Current (A) Issue 1 – March 2008 1.6 Normalised Curves v Temperature 1000 2.5V 10 Output Characteristics VDS = 10V 2 1 VDS Drain-Source Voltage (V) Output Characteristics ID Drain Current (A) 3.5V 3V VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) VGS 4V 0.01 0.1 1 4.5V 1 0.01 10 10V 10 ID Drain Current (A) ID Drain Current (A) 10V 8 www.zetex.com ZXMN3F318DN8 Q2 Typical Characteristics 600 500 400 VGS Gate-Source Voltage (V) C Capacitance (pF) VGS = 0V f = 1MHz CISS 300 COSS CRSS 200 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Issue 1 – March 2008 © Zetex Semiconductors plc 2008 10 9 8 7 6 5 4 3 2 1 0 ID = 5A VDS = 15V 0 1 2 3 4 5 6 Q - Charge (nC) 7 8 9 Gate-Source Voltage v Gate Charge 9 www.zetex.com ZXMN3F318DN8 Packaging details – SO8 Issue 1 – March 2008 © Zetex Semiconductors plc 2008 10 www.zetex.com ZXMN3F318DN8 Intentionally left blank Issue 1 – March 2008 © Zetex Semiconductors plc 2008 11 www.zetex.com ZXMN3F318DN8 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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