PHILIPS BC850BW Npn general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 12
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
3
handbook, halfpage
3
1
MARKING
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
BC849BW
2B∗
BC850BW
2F∗
BC849CW
2C∗
BC850CW
2G∗
2
1
2
Top view
MAM062
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
BC850W
collector-emitter voltage
MAX.
UNIT
open emitter
BC849W
VCEO
MIN.
−
30
V
−
50
V
−
30
V
−
45
V
−
5
V
open base
BC849W
BC850W
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
Ptot
total power dissipation
Tstg
open collector
−
200
mA
−
200
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
−
TYP.
−
MAX.
collector cut-off current
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V; see Figs 2 and 3
BC849BW; BC850BW
200
−
450
BC849CW; BC850CW
420
−
800
IC = 10 mA; IB = 0.5 mA
−
−
250
mV
IC = 100 mA; IB = 5 mA; note 1
−
−
600
mV
VBE
collector-emitter saturation
voltage
base-emitter voltage
15
UNIT
ICBO
VCEsat
IE = 0; VCB = 30 V
MIN.
nA
IC = 2 mA; VCE = 5 V
580
−
700
mV
IC = 10 mA; VCE = 5 V
−
−
770
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
3
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz
−
11
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
4
dB
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
102
10
IC (mA)
103
BC849BW; BC850BW.
Fig.2 DC current gain; typical values.
MBH725
600
handbook, full pagewidth
VCE = 5 V
hFE
400
200
0
10−2
10−1
1
10
BC849CW; BC850CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 12
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 12
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC849W; BC850W
NOTES
1999 Apr 12
7
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© Philips Electronics N.V. 1999
SCA63
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Date of release: 1999 Apr 12
Document order number:
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