MBRM5100 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 NEW PRODUCT Features · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Reverse Breakdown Voltage For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 G P 3 1 Case: POWERMITEâ3 Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See sheet 3 Weight: 0.072 grams (approx.) H Max A 4.03 4.09 B 6.40 6.61 D G 2 M D K C C PIN 1 Note: Pins 1 & 2 must be electrically connected at the printed circuit board. 1.83 NOM 1.10 1.14 .178 NOM 5.01 5.17 J 4.37 4.43 L PIN 3, BOTTOMSIDE HEAT SINK .889 NOM H K L PIN 2 Maximum Ratings Min E Mechanical Data · · · Dim C J B · · POWERMITEâ3 E A .178 NOM .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 100 V VR(RMS) 70 V IO 5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @TC = 80°C IFSM 100 A Typical Thermal Resistance Junction to Case RqJC 1.2 °C/W Typical Thermal Resistance Junction to Soldering Point RqJS 2.7 °C/W Tj -65 to +125 °C TSTG -65 to +150 °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also figure 5) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 100 ¾ ¾ V IR = 0.2mA Forward Voltage (Note 1) VFM ¾ ¾ ¾ ¾ 0.75 0.58 0.84 0.67 0.81 0.64 0.90 0.73 V IF = 5A, Tj = 25°C IF = 5A, Tj = 125°C IF = 10A, Tj = 25°C IF = 10A, Tj = 125°C Peak Reverse Current (Note 1) IRM ¾ ¾ 0.015 2 0.2 100 mA Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition Tj = 25°C, VR = 100V Tj = 125°C, VR = 100V 1. Short duration test pulse used to minimize self-heating effect. DS30141 Rev. 2 - 2 1 of 3 MBRM5100 IF, INSTANTANEOUS FORWARD CURRENT (A) 10,000 Tj = 125°C 1000 Tj = 125°C 10 Tj = 100°C 100 Tj = 100°C 1.0 Tj = 75°C 10 Tj = 25 °C 0.1 1.0 Tj = 25°C 0.1 0.01 0 0.2 0.4 0.6 0 0.8 0.5 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 1000 100 f = 1MHz Tc = 80 °C CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) NEW PRODUCT 100 80 60 40 20 100 10 0 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak forward Surge Current DS30141 Rev. 2 - 2 2 of 3 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage MBRM5100 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) NEW PRODUCT 7.5 6.0 Note 1 4.5 Note 2 3.0 1.5 Note 3 0 0 25 75 50 100 125 150 3.5 3.0 2.5 2.0 1.5 0.5 0 0 7 4 1 2 5 3 6 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 1. TA = TSOLDERING POINT, RqJS = 2.7°C/W, RqSA = 0°C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 100-140°C/W. Ordering Information Notes: Note 3 1.0 TA, AMBIENT TEMPERATURE (°C) Fig. 5 DC Forward Current Derating Notes: Note 2 (Note 4) Device Packaging Shipping MBRM5100-13 POWERMITEâ3 5000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM5100 YYWW MBRM5100 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 POWERMITE is a registered trademark of Microsemi Corporation. DS30141 Rev. 2 - 2 3 of 3 MBRM5100