HAT2279H Silicon N Channel Power MOS FET Power Switching REJ03G1464-0200 Rev.2.00 Jul 05, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 mΩ typ. (at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 3 12 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.2.00 Jul 05, 2006 page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Ratings 80 ±20 30 120 30 25 83 Unit V V A A A A mJ Pch Note3 θch-C Tch Tstg 25 5 150 –55 to +150 °C/W °C °C W HAT2279H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.2.00 Jul 05, 2006 page 2 of 7 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 — — 0.8 — — 42 — — — — — — — — — — Typ — — — — 9.5 11 70 3520 410 160 0.5 60 9.5 9.0 9.5 14.5 56 Max — ±0.5 1 2.3 12 15 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 9.5 0.83 50 — 1.08 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 30 V, RL = 2 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs HAT2279H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 0 50 100 150 PW 10 Op er 1 = 10 m s 10 at ion 1 Tc 0µ s m s = Operation in this area is limited by RDS(on) 0.1 25 °C Ta = 25°C 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 3.1 V VDS = 10 V Pulse Test 10 V 2.9 V Drain Current ID (A) Drain Current ID (A) DC 0.01 0.01 200 50 40 10 µs 100 30 2.7 V 20 10 VGS = 2.5 V 40 30 20 Tc = 75°C 25°C 10 –25°C Pulse Test 0 2 4 6 Drain to Source Voltage 8 0 10 VDS (V) 160 120 ID = 10 A 80 5A 40 0 2A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Jul 05, 2006 page 3 of 7 3 5 4 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Pulse Test 2 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 1 100 VGS = 4.5 V 10 10 V Pulse Test 1 1 10 100 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 30 Pulse Test 25 VGS = 4.5 V 20 15 ID = 2 A, 5 A, 10 A 10 VGS = 10 V 2 A, 5 A, 10 A 5 0 –25 0 25 50 75 100 125 150 1000 100 Tc = –25°C 25°C 10 75°C 1 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 1000 Capacitance C (pF) Ciss 100 10 1 0.1 1 3 10 30 100 300 Coss 100 Crss VGS = 0 f = 1 MHz 10 0 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 80 16 VDS = 50 V 25 V 10 V VGS VDS 40 12 8 20 4 VDS = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) Rev.2.00 Jul 05, 2006 page 4 of 7 0 100 1000 VGS = 10 V, VDS = 30 V Rg = 4.7 Ω, duty ≤ 1 % Switching Time t (ns) ID = 30 A 0 1000 10 0.3 100 60 3000 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2279H 100 td(off) tf 10 td(on) tr 1 0.1 1 10 Drain Current ID (A) 100 HAT2279H Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) 50 40 30 10 V VGS = 0 V, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 100 IAP = 25 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 5°C/ W, Tc = 25°C 0.1 0.05 0.02 1 0.0 0.03 0.01 10 1s PDM t ho pu D= lse PW T PW T 100 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit VDS Monitor Avalanche Waveform EAR = L 1 2 L • IAP2• VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 Rev.2.00 Jul 05, 2006 page 5 of 7 VDD HAT2279H Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 30 V 10% 10% 90% td(on) Rev.2.00 Jul 05, 2006 page 6 of 7 10% tr 90% td(off) tf HAT2279H Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 3.3 1.0 0.25 –0.03 Unit: mm 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 1.1 Max +0.03 0.07 –0.04 0° – 8° +0.25 1 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2279H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jul 05, 2006 page 7 of 7 Sales Strategic Planning Div. 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