UMS CHR2295 24-30ghz integrated down converter Datasheet

CHR2295
RoHS COMPLIANT
24-30GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
LO
The CHR2295 is a multifunction chip which
integrates a LO time two multiplier, a
balanced cold FET mixer, and a RF LNA. It
is designed for a wide range of applications,
typically
commercial
communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
I
GM
GB
VDM
VDL
GX
VGA
Q
RF
Main Features
12.00
8.00
■ Broadband performances: 24-30GHz
■ 11dB conversion gain
■ 3.5dB noise figure, for IF>0.1GHz
■ 10dBm LO input power
■ -10dBm RF IP@1dB gain comp.
■ Low DC power: [email protected]
■ Chip size: 2.49x1.97x0.10mm
4.00
(dB)
0.00
Gc_channel_sup_rf+
Gc_channel_inf_rf+
Gc_channel inf_rf-
Gc_channel_sup_rf-
-4.00
-8.00
-12.00
-16.00
-20.00
-24.00
22.5
23.5
24.5
25.5
26.5
27.5
28.5
29.5
30.5
31.5
2XLO Frequency (GHz)
Conversion Gain & Image suppression
@IF=1.5GHz (test board losses included)
Main Characteristics
Tamb. = 25°C
Symbol
FRF
FLO
FIF
Gc
Parameter
Min
RF frequency range
LO frequency range
IF frequency range
Conversion gain
24
12
DC
8.5
Typ
11
Max
Unit
30
15
1.5
GHz
GHz
GHz
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref.: DSCHR22951192 - 11 Jul 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09
32.5
24-30GHz MFC Down Converter
CHR2295
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
24
30
GHz
FLO
LO frequency range
12
15
GHz
FIF
IF frequency range
DC
1.5
GHz
Gc
Conversion gain
(1)
8.5
NF
PLO
Img Sup
P1dB
11
dB
Noise Figure, for IF>0.1GHz
3.5
dB
LO Input power
10
dBm
17
dBc
-10
dBm
Image Suppression
15
Input power at 1dB gain compression
LO VSWR
Input LO VSWR
(1)
2.0:1
RF VSWR
Input RF VSWR (1)
3.0:1
(2)
Id
Bias current
120
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances will be
achieved for Idm=50mA and Idl=70mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
(2)
Pin
Maximum peak input power overdrive
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref.: DSCHR22951192 - 11 Jul 11
2/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
24-30GHz MFC Down Converter
CHR2295
Typical On-wafer Measurements
Bias Conditions : Vdm= Vdl= 3.5V, Vgm= -0.9V, Vgb= -0.3V, Vgx= -0.7V, Vga= -0.2V
10
8
6
4
2
0
-2
-4
-6
Freq_RF= 24.6GHz
Freq_LO= 12.05GHz
-8
-10
-12
IF power_I (dBm)
Conv_gain I (dB)
IF power_Q (dBm)
Conv_gain Q (dB)
-14
-20
-18
-16
-14
-12
-10
-8
-6
-4
Input RF power (dBm)
10
8
6
4
2
0
-2
-4
-6
Freq_RF= 28GHz
Freq_LO= 13.75GHz
-8
-10
-12
IF power_I (dBm)
Conv_gain I (dB)
IF power_Q (dBm)
Conv_gain Q (dB)
-14
-20
-18
-16
-14
-12
-10
-8
-6
-4
Input RF power (dBm)
Input RF compression by channel
Ref.: DSCHR22951192 - 11 Jul 11
3/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
24-30GHz MFC Down Converter
CHR2295
Typical On-board Measurements
Bias Conditions : Vdm= Vdl= 3.5V, Vgm= Vgx= -0.9V, Vgb= Vga= -0.3V
All these measurements include the losses from the test board (typically 1dB for the
conversion gain and 0.5dB for the Noise Figure).
Conversion Gain & Image suppression (dB)
12.00
8.00
4.00
0.00
-4.00
IF=1GHz
-8.00
IF=2GHz
IF=1.5GHz
-12.00
-16.00
IF=1GHz
IF=2GHz
-20.00
IF=1.5GHz
-24.00
22.5
23.5
24.5
25.5
26.5
27.5
28.5
29.5
30.5
31.5
32.5
2XLO Frequency (GHz)
Conversion gain & Image suppression versus IF frequency
10
9
Channel_sup_IF_1GHz
Channel_sup_IF_1.5GHz
Channel_sup_IF_2GHz
8
Channel_inf_IF_1GHz
Channel_inf_IF_1.5GHz
Channel_inf_IF_2GHz
Noise factor (dB)
7
6
5
4
3
2
1
0
24.5
25
25.5
26
26.5
27
27.5
28
28.5
29
29.5
RF Frequency (GHz)
Noise figure supradyne & infradyne versus IF frequency
Ref.: DSCHR22951192 - 11 Jul 11
4/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
24-30GHz MFC Down Converter
CHR2295
Chip Assembly and Mechanical Data
LO
IN
To Vgm DC Gate Supply
I
OUT
To Vgb DC Gate Supply
To Vdm,Vdl DC Drain Supply
Q
OUT
To Vgx DC Gate Supply
To Vga DC Gate Supply
RF
IN
Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended
Bonding pad positions
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref.: DSCHR22951192 - 11 Jul 11
5/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
24-30GHz MFC Down Converter
CHR2295
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form:
CHR2295-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref.: DSCHR22951192 - 11 Jul 11
6/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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