SavantIC Semiconductor Product Specification MJW21192 Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·Complement to type MJW21191 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-247) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 2 A PD Total power dissipation 100 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W SavantIC Semiconductor Product Specification MJW21192 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=8A; IB=1.6A 2.0 V VBE(ON) Base-emitter on voltage IC=4A ; VCE=2V 2.0 V ICES Collector cut-off current VCB=150V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=4A ; VCE=2V 15 hFE-2 DC current gain IC=8A ; VCE=2V 5 Transition frequency IC=1.0A ; VCE=10V,f=1MHz fT CONDITIONS 2 MIN TYP. MAX 150 4.0 UNIT V 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJW21192