ONSEMI BAT54ALT1G

BAT54ALT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
CATHODE
1
ANODE
3
2
CATHODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
IF
200 Max
mA
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
IFRM
300
mA
Forward Current (DC)
Junction Temperature
TJ
−55 to 150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 12
B6M G
G
1
B6
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAT54ALT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
BAT54ALT3G
SOT−23
(Pb−Free)
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 11
1
Publication Order Number:
BAT54ALT1/D
BAT54ALT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
mAdc
Forward Voltage
(IF = 0.1 mAdc)
VF
−
0.22
0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−
0.41
0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−
0.52
0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.29
0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−
0.35
0.40
Vdc
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
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2
BAT54ALT1G
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
0.1 mF
tp
IF
T
trr
10%
T
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
TA = 150°C
IR, REVERSE CURRENT (mA)
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
100
10
1.0
TA = 85°C
0.1
0.01
0.001
0.6
TA = 125°C
TA = 25°C
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1 25°C
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
30
BAT54ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
BAT54ALT1/D