Infineon IPDH4N03LA-G Optimos 2 power - transistor Datasheet

IPDH4N03LA G
OptiMOS®2 Power-Transistor
IPSH4N03LA G
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
V DS
25
V
R DS(on),max (SMD Version)
4.2
mΩ
ID
90
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPDH4N03LA G
IPSH4N03LA G
Package
P-TO252-3-11
P-TO251-3-11
Ordering Code
Q67042-S4250
Q67042-S4254
Marking
H4N03LA
H4N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
90
T C=100 °C
77
Pulsed drain current
I D,pulse
T C=25 °C3)
360
Avalanche energy, single pulse
E AS
I D=90 A, R GS=25 Ω
150
Reverse diode dv /dt
dv /dt
I D=90 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 0.92 - target data sheet
Unit
A
mJ
kV/µs
±20
V
94
W
-55 ... 175
°C
55/175/56
page 1
2004-10-27
IPDH4N03LA G
Parameter
IPSH4N03LA G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.6
minimal footprint
-
-
75
6 cm2 cooling area5)
-
-
50
25
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=40 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=50 A
-
6.1
7.6
mΩ
V GS=4.5 V, I D=50 A,
SMD version
-
5.9
7.4
V GS=10 V, I D=60 A
-
3.7
4.4
V GS=10 V, I D=60 A,
SMD version
-
3.5
4.2
-
1.3
-
Ω
45
90
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=60 A
1)
J-STD20 and JESD22
1)
Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 109 A.
3)
See figure 3
4)
T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.92 - target data sheet
page 2
2004-10-27
IPDH4N03LA G
Parameter
IPSH4N03LA G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2400
3200
-
920
1200
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
110
160
Turn-on delay time
t d(on)
-
9
14
Rise time
tr
-
7
11
Turn-off delay time
t d(off)
-
29
44
Fall time
tf
-
4.6
7
Gate to source charge
Q gs
-
8
11
Gate charge at threshold
Q g(th)
-
3.9
5.1
Gate to drain charge
Q gd
-
5.6
8
Switching charge
Q sw
-
10
14
Gate charge total
Qg
-
19
26
Gate plateau voltage
V plateau
-
3.4
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
17
23
Output charge
Q oss
V DD=15 V, V GS=0 V
-
20
27
-
-
78
-
-
360
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 6)
V DD=15 V, I D=45 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=78 A,
T j=25 °C
-
0.93
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
15
nC
6)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 0.92 - target data sheet
page 3
2004-10-27
Rev. 0.92 - target data sheet
page 4
2004-10-27
IPDH4N03LA G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
IPSH4N03LA G
100
100
80
80
I D [A]
P tot [W]
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
10
limited by on-state
resistance
1 µs
10 µs
100 µs
1
Z thJC [K/W]
100
I D [A]
DC
1 ms
0.5
0.2
0.1
0.05
10
0.1
0.02
10 ms
0.01
1
single pulse
0.01
0.1
1
10
100
V DS [V]
Rev. 0.92 - target data sheet
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 5
2004-10-27
IPDH4N03LA G
IPSH4N03LA G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
16
100
4.5 V
90
4V
3V
10 V
3.2 V
3.4 V
3.7 V
4V
14
80
12
70
3.7 V
R DS(on) [mΩ]
I D [A]
60
50
40
3.4 V
30
3.2 V
10
8
4.5 V
6
4
10 V
20
3V
10
2
2.8 V
0
0
0
1
2
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
140
120
80
100
I D [A]
g fs [S]
60
40
80
60
40
20
20
175 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 0.92 - target data sheet
0
20
40
60
I D [A]
V GS [V]
page 6
2004-10-27
IPDH4N03LA G
IPSH4N03LA G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=60 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
8
2.5
7
2
6
98 %
4
V GS(th) [V]
R DS(on) [mΩ]
400 µA
5
typ
3
1.5
40 µA
1
2
0.5
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
25 °C, 98%
Ciss
Coss
103
100
25 °C
175 °C, 98%
I F [A]
C [pF]
175 °C
Crss
102
10
101
1
0
10
20
30
Rev. 0.92 - target data sheet
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
page 7
2004-10-27
IPDH4N03LA G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=45 A pulsed
parameter: Tj(start)
parameter: V DD
100
IPSH4N03LA G
12
25 °C
100 °C
150 °C
15 V
10
5V
20 V
V GS [V]
I AV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
40
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
29
V GS
28
Qg
27
V BR(DSS) [V]
26
25
24
V g s(th)
23
22
Q g(th)
21
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 0.92 - target data sheet
page 8
2004-10-27
IPDH4N03LA G
IPSH4N03LA G
Package Outline
P-TO252-3-11: Outline
Footprint:
Packaging:
Dimensions in mm
Rev. 0.92 - target data sheet
page 9
2004-10-27
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