MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 20 VOLTS Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection Pb−Free Package is Available SMB CASE 403A PLASTIC Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • AYWW B12G G 260°C Max. for 10 Seconds Cathode Polarity Band MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 V Average Rectified Forward Current (TL = 115°C) IF(AV) 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Operating Junction Temperature TJ −65 to +125 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. B12 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † MBRS120T3 SMB 2500/Tape & Reel MBRS120T3G SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 6 1 Publication Order Number: MBRS120T3/D MBRS120T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL 12 °C/W Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF 0.6 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR Thermal Resistance, Junction−to−Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS mA 1.0 10 1 0.7 0.5 TC = 100°C 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 TC = 25°C 0.2 0.3 0.4 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 TJ = 125°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%. 0.5 0.6 0.7 0.8 0.9 1 1.1 100°C 75°C 25°C 0 4 8 12 16 20 24 28 32 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 36 40 MBRS120T3 200 C, CAPACITANCE (pF) 180 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 10 RATED VOLTAGE APPLIED RθJC = 12°C/W TJ = 125°C 9 8 7 6 5 4 3 SQUARE WAVE DC 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (°C) 110 120 130 5 4 π 5 3 CAPACITANCE LOAD 2 IPK IAV 1 0 DC SQUARE WAVE TJ = 125°C 0 10 = 20 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 3 5 MBRS120T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 2.03 2.11 0.23 0.30 3.56 3.81 4.32 4.57 5.44 5.59 1.02 1.27 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.095 0.006 0.083 0.012 0.150 0.180 0.220 0.050 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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