ONSEMI MPSA14

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by MPSA13/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR 3
BASE
2
EMITTER 1
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCES
30
Vdc
Collector – Base Voltage
VCBO
30
Vdc
Emitter – Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CES
30
—
Vdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
—
100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, IB = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
MPSA13
MPSA14
5,000
10,000
—
—
MPSA13
MPSA14
10,000
20,000
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
(IC = 100 mAdc, VCE = 5.0 Vdc)
—
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
1.5
Vdc
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
2.0
Vdc
fT
125
—
MHz
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
2. fT = |hfe| S ftest.
v 300 ms; Duty Cycle v 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
100
10 µA
50
100 µA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 µA
0.1
0.07
0.05
10 µA
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
50 100 200
50 k 100 k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
IC = 10 µA
70
50
100 µA
30
20
1.0 mA
10
1.0
2.0
10
10 µA
8.0
100 µA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 4. Total Wideband Noise Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
1.0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 5. Wideband Noise Figure
3
SMALL–SIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL–SIGNAL CURRENT GAIN
20
C, CAPACITANCE (pF)
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200 k
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
30 k
20 k
10 k
7.0 k
5.0 k
– 55°C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
4
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 9. Collector Saturation Region
1.6
10
2.0
3.0
Figure 8. DC Current Gain
5.0 7.0
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100 k
70 k
50 k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
500
– 1.0
– 2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
– 55°C TO 25°C
– 3.0
25°C TO 125°C
– 4.0
qVB FOR VBE
– 5.0
– 55°C TO 25°C
– 6.0
5.0 7.0 10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 11. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
300
200
FIGURE A
1.0 ms
tP
TA = 25°C
TC = 25°C
100 µs
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
40
+ t1 f + ttP1
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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6
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*MPSA13/D*
MPSA13/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data