ONSEMI BCP56T1

BCP56T1 Series
Preferred Devices
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-223
package, which is designed for medium power surface mount
applications.
Features
• Pb−Free Package is Available
• High Current: 1.0 Amp
• The SOT-223 package can be soldered using wave or reflow. The
•
•
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MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1 to order the 7 inch/1000 unit reel
Use BCP56T3 to order the 13 inch/4000 unit reel
PNP Complement is BCP53T1
COLLECTOR 2,4
BASE
1
EMITTER
3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current
IC
1
Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
Watts
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
−65 to 150
°C
Rating
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
Symbol
Max
Unit
RJA
83.3
°C/W
260
10
°C
Sec
TL
4
1
SOT−223
CASE 318E
STYLE 1
2
3
MARKING DIAGRAM
AWW
xxxx
xxxx
A
WW
= Specific Device Code
= Assembly Location
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
BCP56T1/D
BCP56T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
100
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−
−
100
nAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
−
10
Adc
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V)
(IC = 150 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
All Part Types
BCP56T1
BCP56-10T1
BCP56-16T1
All Types
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.5
Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
−
−
1.0
Vdc
fT
−
130
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device
BCP56T1
BCP56T3
BCP56−10T1
Marking
Package
Shipping†
BH
SOT−223
1000 / Tape & Reel
BH
SOT−223
4000 / Tape & Reel
BH−10
SOT−223
1000 / Tape & Reel
SOT−223
1000 / Tape & Reel
SOT−223
(Pb−Free)
1000 / Tape & Reel
SOT−223
4000 / Tape & Reel
BCP56−16T1
BCP56−16T1G
BH−16
BCP56−16T3
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BCP56T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
1000
TJ = 125°C
TJ = 25°C
100
10
TJ = − 55°C
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
1000
80
60
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
TJ = 25°C
40
Cibo
20
10
8.0
6.0
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Cobo
4.0
0.1
1000
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
1.0
V, VOLTAGE (VOLTS)
0.8
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5
1.0
2.0
100
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
200
100
Figure 3. Capacitance
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Current-Gain − Bandwidth Product
50
500
1.0
TJ = 25°C
0.8
0.6
IC = 10mA
50
mA
100mA
250mA
500mA
0.4
0.2
0
0.05
Figure 4. “On” Voltages
0.1
0.2
0.5
5.0
10
1.0 2.0
IC, COLLECTOR CURRENT (mA)
20
Figure 5. Collector Saturation Region
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3
50
BCP56T1 Series
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
F
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
4
S
1
2
B
3
D
L
G
J
C
0.08 (0003)
STYLE 1:
PIN 1.
2.
3.
4.
M
H
K
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
mm inches
1.5
SCALE 6:1
0.059
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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USA/Canada
ON Semiconductor Website: http://onsemi.com
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Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
BCP56T1/D