MMBTA92LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol MMBTA92 Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM 3 1 2 2D SOT−23 (TO−236AF) CASE 318 Style 6 2D ORDERING INFORMATION Package Shipping† MMBTA92LT1 SOT−23 3000 / Tape & Reel MMBTA92LT1G SOT−23 3000 / Tape & Reel MMBTA92LT3 SOT−23 10000 / Tape & Reel Device 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. = Specific Device Code †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 November, 2003 − Rev. 4 1 Publication Order Number: MMBTA92LT1/D MMBTA92LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −300 − −300 − −5.0 − − −0.25 − −0.1 25 40 25 − − − − −0.5 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 Adc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −100 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Adc Adc ON CHARACTERISTICS (Note 3) hFE DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) − Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc fT 50 − MHz − 6.0 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Ccb 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 pF MMBTA92LT1 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 −55°C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f, T CURRENT−GAIN BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25°C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages http://onsemi.com 3 MMBTA92LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. 3 1 V B S 2 DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 5. SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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