VISHAY SIB408DK-T1-GE3

New Product
SiB408DK
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.040 at VGS = 10 V
7a
0.050 at VGS = 4.5 V
7a
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
2.9 nC
PowerPAK SC-75-6L-Single
1
APPLICATIONS
D
2
D
Marking Code
3
6
G
D
5
1.60 mm
S
• Notebook
- Load Switch
G
AEX
Part # code
S
D
D
XXX
Lot Traceability
and Date code
1.60 mm
4
S
Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current Pulse
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
30
± 20
7a
7a
6b, c
4.8b, c
20
7a
2b, c
10
5
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t≤5s
RthJA
41
51
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
7.5
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 64828
S09-0859-Rev. A, 18-May-09
www.vishay.com
1
New Product
SiB408DK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
29
mV/°C
- 5.2
1.2
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 6 A
0.032
0.040
VGS = 4.5 V, ID = 5 A
0.040
0.050
VDS = 15 V, ID = 6 A
14
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
350
VDS = 15 V, VGS = 0 V, f = 1 MHz
28
VDS = 15 V, VGS = 4.5 V, ID = 6 A
VDS = 15 V, VGS = 10 V, ID = 6 A
tr
2.9
4.4
6.2
9.5
1.0
f = 1 MHz
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω
0.5
2.5
5
13
20
11
17
11
17
tf
9
15
td(on)
5
10
tr
td(off)
nC
0.85
td(on)
td(off)
pF
65
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω
tf
8
15
13
20
6
12
Ω
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
7
20
IS = 2.0 A, VGS = 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
13
26
ns
Body Diode Reverse Recovery Charge
Qrr
7
14
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
9
4
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64828
S09-0859-Rev. A, 18-May-09
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
20
VGS = 10 V thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
VGS = 3 V
3
2
TC = 25 °C
1
4
TC = 125 °C
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
0
2.0
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
500
0.060
400
VGS = 4.5 V
0.045
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1
VGS = 10 V
0.030
300
200
0.015
100
Coss
Crss
0.000
0
0
4
8
12
16
20
0
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.7
ID = 6 A
ID = 6 A
8
VDS = 15 V
6
VDS = 7.5 V
4
VDS = 22.5 V
2
(Normalized)
1.5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
VGS = 10 V
1.3
VGS = 4.5 V
1.1
0.9
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64828
S09-0859-Rev. A, 18-May-09
5
6
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
ID = 6 A
TJ = 25 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = - 50 °C
0.1
0.01
0.001
0.0
0.08
0.06
TJ = 125 °C
0.04
TJ = 25 °C
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
VSD - Source-to-Drain Voltage (V)
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
20
0.2
Power (W)
VGS(th) Variance (V)
15
- 0.1
ID = 5 mA
- 0.4
10
ID = 250 µA
5
- 0.7
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10 µs
I D - Drain Current (A)
10
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.1
0.01
0.001
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 64828
S09-0859-Rev. A, 18-May-09
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16
8
7
12
5
Power (W)
I D - Drain Current (A)
6
4
3
8
4
2
1
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64828
S09-0859-Rev. A, 18-May-09
www.vishay.com
5
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
0.1
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64828.
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Document Number: 64828
S09-0859-Rev. A, 18-May-09
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
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13
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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