Si4276DY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC for Notebook PC D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 Top View Ordering Information: Si4276DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel 1 Channel 2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 8e TC = 70 °C e 8 ID TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) IDM TC = 25 °C Source-Drain Current Diode Current Single Pulse Avalanche Current L = 0.1 mH Avalanche Energy Maximum Power Dissipation V 8 6.4 8b, c, e 6.8b, c 7.6b, c 5.5b, c 50 30 3.0 2.3 1.7b, c 1.7b, c IAS 20 10 EAS 20 5 IS TA = 25 °C 3.6 2.8 TC = 70 °C 2.3 1.8 2.1b, c 2.0b, c 1.3b, c 1.3b, c PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg A mJ TC = 25 °C TA = 25 °C Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Channel 1 Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady Channel 2 Symbol RthJA Typical Maximum Typical Maximum 47 60 58 62.5 RthJF 30 35 38 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 107 °C/W (Ch 1) and 110 °C/W (Ch 2). e. Package limited. Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 1 Si4276DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch 1 30 VGS = 0 V, ID = 250 µA Ch 2 30 ID = 250 µA Ch 1 29 ID = 250 µA Ch 2 30 ID = 250 µA Ch 1 - 5.2 V mV/°C ID = 250 µA Ch 2 VDS = VGS, ID = 250 µA Ch 1 1.2 2.5 VDS = VGS, ID = 250 µA Ch 2 1.2 2.5 VDS = 0 V, VGS = ± 20 V - 4.4 Ch 1 100 Ch 2 100 VDS = 30 V, VGS = 0 V Ch 1 1 VDS = 30 V, VGS = 0 V Ch 2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch 1 10 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch 2 10 VDS = 5 V, VGS = 10 V Ch 1 10 VDS = 5 V, VGS = 10 V Ch 2 10 VGS = 10 V, ID = 9.5 A Ch 1 0.0127 0.0153 V nA µA A VGS = 10 V, ID = 6.8 A Ch 2 0.0230 0.0280 VGS = 4.5 V, ID = 8.7 A Ch 1 0.0146 0.0184 VGS = 4.5 V, ID = 6.1 A Ch 2 0.0280 0.0340 VDS = 15 V, ID = 9.5 A Ch 1 43 VDS = 15 V, ID = 6.8 A Ch 2 17 Ch 1 1000 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Ch 2 366 Ch 1 215 Ch 2 82 Ch 1 85 Ch 2 45 VDS = 15 V, VGS = 10 V, ID = 9.5 A Ch 1 17.2 26 VDS = 15 V, VGS = 10 V, ID = 6.8 A Ch 2 7.3 15 Ch 1 8.4 17 Ch 2 3.6 8 Ch 1 3 Channel 1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel 2 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel 1 VDS = 15 V, VGS = 4.5 V, ID = 9.5 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg www.vishay.com 2 Channel 2 VDS = 15 V, VGS = 4.5 V, ID = 6.8 A f = 1 MHz Ch 2 1.1 Ch 1 2.6 Ch 2 1.3 pF Ch 1 0.6 3.1 6.2 Ch 2 0.5 2.6 5.2 nC Ω Document Number: 66599 S10-1289-Rev. A, 31-May-10 Si4276DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. 8 16 Unit Dynamica Turn-On Delay Time Ch 1 td(on) Rise Time tr Turn-Off DelayTime td(off) Fall Time Channel 1 VDD = 15 V, RL = 2 Ω ID ≅ 7.6 A, VGEN = 10 V, Rg = 1 Ω Channel 2 VDD = 15 V, RL = 2.7 Ω ID ≅ 5.5 A, VGEN = 10 V, Rg = 1 Ω tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time Channel 1 VDD = 15 V, RL = 2 Ω ID ≅ 7.6 A, VGEN = 4.5 V, Rg = 1 Ω Channel 2 VDD = 15 V, RL = 2.7 Ω ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω tf Ch 2 4 8 Ch 1 10 20 Ch 2 8 16 Ch 1 20 30 Ch 2 11 20 Ch 1 7 14 Ch 2 7 14 Ch 1 14 21 Ch 2 8 16 Ch 1 11 20 Ch 2 10 20 Ch 1 18 27 Ch 2 10 20 Ch 1 7 14 Ch 2 7 14 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage IS TC = 25 °C ISM VSD Ch 1 3 Ch 2 2.3 Ch 1 50 Ch 2 30 IS = 7.6 A Ch 1 0.82 1.2 IS = 5.5 A Ch 2 0.85 1.2 Ch 1 20 30 Ch 2 13 20 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel 1 IF = 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C Ch 1 12 20 Ch 2 6 12 ta Channel 2 IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch 1 11 Ch 2 7 Ch 1 9 Ch 2 6 Reverse Recovery Fall Time Reverse Recovery Rise Time tb A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 3 Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 V GS = 10 V thru 4 V 8 T C = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 40 30 20 V GS = 3 V 6 T C = 25 °C 4 10 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.6 1.2 1.8 2.4 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 3.0 1400 0.018 Ciss 1050 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) T C = 125 °C 2 0.016 V GS = 4.5 V 0.014 V GS = 10 V 700 350 Coss 0.012 Crss 0.010 0 0 10 20 30 40 50 0 6 12 18 30 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 1.7 ID = 9.5 A V GS = 10 V; I D = 9.5 A 8 V DS = 7.5 V 6 V DS = 15 V 4 V DS = 24 V 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 1.3 V GS = 4.5 V ID = 8.7 A 1.1 0.9 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 15 18 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 66599 S10-1289-Rev. A, 31-May-10 Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 9.5 A T J = 150 °C 10 T J = 25 °C 1 0.025 T J = 125 °C 0.020 0.015 T J = 25 °C 0.1 0.0 0.010 0.3 0.6 0.9 0 1.2 2 4 6 8 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.1 10 100 80 1.8 Power (W) VGS(th) (V) ID = 250 μA 1.5 60 40 1.2 20 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 T J - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 100 μs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 10 s DC 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 5 Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 I D - Drain Current (A) 12 9 Package Limited 6 3 0 0 25 50 75 100 125 150 0 25 T C - Case Temperature (°C) 5 1.5 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 0.6 0.3 1 0.0 0 0 25 50 75 100 125 150 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 66599 S10-1289-Rev. A, 31-May-10 Si4276DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 7 Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 30 V GS = 10 V thru 4 V 4 T C = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 24 18 12 V GS = 3 V 3 T C = 25 °C 2 T C = 125 °C 1 6 0 0.0 0.5 1.0 1.5 0 0.0 2.0 1.2 1.8 2.4 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 3.0 500 Ciss 400 0.045 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 V GS = 4.5 V 0.030 V GS = 10 V 300 200 Coss 0.015 100 Crss 0.000 0 0 5 10 15 20 25 30 0 6 ID - Drain Current (A) 12 24 30 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 6.8 A V GS = 10 V; I D = 6.8 A 8 V DS = 7.5 V 6 V DS = 15 V 4 V DS = 24 V 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.3 V GS = 4.5 V ID = 6.1 A 1.1 0.9 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 8 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 66599 S10-1289-Rev. A, 31-May-10 Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.060 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 6.8 A T J = 150 °C 10 T J = 25 °C 1 0.045 T J = 125 °C 0.030 T J = 25 °C 0.015 0 0.1 0.0 0.3 0.6 0.9 0 1.2 2 V SD - Source-to-Drain Voltage (V) 4 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.1 50 1.9 40 Power (W) VGS(th) (V) ID = 250 μA 1.7 1.5 1.3 1.1 - 50 30 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Time (s) T J - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1s 10 s DC 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 9 Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 1.5 4 1.2 Power (W) Power (W) 3 2 0.9 0.6 1 0.3 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 66599 S10-1289-Rev. A, 31-May-10 Si4276DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66599. Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 11 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading Document Number: 70740 Revision: 18-Jun-07 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.vishay.com 1 APPLICATION NOTE In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1