MBR0540T1, MBR0540T3 Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES, 40 VOLTS Features • • • • • Guardring for Stress Protection Very Low Forward Voltage Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly Pb−Free Packages are Available SOD−123 CASE 425 STYLE 1 Mechanical Characteristics • • • • • • • • Reel Options: 3,000 per 7 inch reel/8 mm tape Reel Options: 10,000 per 13 inch reel/8 mm tape Device Marking: B4 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C max. for 10 Seconds MARKING DIAGRAM B4 M B4 M = Device Code = Date Code ORDERING INFORMATION Package Shipping† MBR0540T1 SOD−123 3000/Tape & Reel MBR0540T1G SOD−123 (Pb−Free) 3000/Tape & Reel MBR0540T3 SOD−123 10,000/Tape & Reel MBR0540T3G SOD−123 (Pb−Free) 10,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 5 1 Publication Order Number: MBR0540T1/D MBR0540T1, MBR0540T3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 115°C) IO 0.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) IFRM 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 1000 V/s Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtja 118 206 °C/W ELECTRICAL CHARACTERISTICS vF Maximum Instantaneous Forward Voltage (Note 3) (iF = 0.5 A) (iF = 1 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 40 V) (VR = 20 V) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.51 0.62 0.46 0.61 TJ = 25°C TJ = 100°C 20 10 13,000 5,000 V A 100 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR0540T1, MBR0540T3 25°C 1.0 TJ = −40°C TJ = 125°C TJ = 25°C TJ = 100°C 0.1 0.2 0.4 0.6 0.8 1.2 1.0 TJ = 125°C TJ = 100°C TJ = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.2 100E−3 I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 10E−3 TJ = 125°C 1.0E−3 TJ = 125°C 10E−3 1.0E−3 TJ = 100°C 100E−6 100E−6 TJ = 100°C 10E−6 1.0E−6 100E−9 10 TJ = 25°C 0 10 20 40 30 10E−6 TJ = 25°C 1.0E−6 100E−9 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 40 0.8 PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) MBR0540T1, MBR0540T3 dc 0.7 FREQ = 20 kHz SQUARE WAVE 0.6 0.5 Ipk/Io = 0.4 Ipk/Io = 5 0.3 Ipk/Io = 10 0.2 Ipk/Io = 20 0.1 0 0 40 20 60 80 100 120 SQUARE WAVE 0.35 dc Ipk/Io = 0.30 Ipk/Io = 5 0.25 Ipk/Io = 10 0.20 Ipk/Io = 20 0.15 0.10 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation TJ , DERATED OPERATING TEMPERATURE ( °C) C, CAPACITANCE (pF) TJ = 25°C 10 5.0 0.40 140 100 0 0.45 10 15 20 25 30 35 40 0.8 126 124 Rtja = 118°C/W 122 120 118 149°C/W 116 180°C/W 114 206°C/W 112 110 228°C/W 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR0540T1, MBR0540T3 1E+00 50% 20% 1E−01 10% 5.0% 2.0% 1.0% 1E−02 Rtjl(t) = Rtjl*r(t) 1E−03 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000 10 100 1,000 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Lead 1E+00 50% 1E−01 20% 10% 5.0% 2.0% 1E−02 1.0% Rtjl(t) = Rtjl*r(t) 1E−03 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient http://onsemi.com 5 MBR0540T1, MBR0540T3 PACKAGE DIMENSIONS SOD−123 PLASTIC CASE 425−04 ISSUE C A ÂÂÂ ÂÂÂ ÂÂÂ C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 −−− 0.000 0.004 −−− 0.006 0.140 0.152 DIM A B C D E H J K B MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 −−− 0.00 0.10 −−− 0.15 3.55 3.85 E 2 STYLE 1: PIN 1. CATHODE 2. ANODE J D SOLDERING FOOTPRINT* ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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