DIGITRON SEMICONDUCTORS MFE140 DUAL GATE MOSFET FM AMPLIFIER MAXIMUM RATINGS Rating Symbol Value Unit Drain-source voltage VDS 25 Vdc Gate-source voltage VGS ±7.0 Vdc Drain current ID 30 mAdc Gate current IG 10 mAdc Total device dissipation @ TA = 25°C Derate above 25°C PD 300 mW TJ, Tstg -65 to 175 °C Operating and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain source breakdown voltage (ID = 10µAdc, VS = 0, VG1 = -4.0Vdc, VG2 = 4.0Vdc) V(BR)DSX 25 - - Vdc Gate 1-source breakdown voltage (IG1 = ±10µAdc, VG2S = 0) V(BR)G1SO ±7.0 - ±20 Vdc Gate 2-source breakdown voltage (IG2 = ±10µAdc, VG2S = 0) V(BR)G2SO ±7.0 - ±20 Vdc Gate 1 leakage current (VG1S = ±6.0Vdc, VG2S = 0, VDS = 0) IG1SS - - 20 nAdc Gate 2 leakage current (VG2S = ±6.0Vdc, VG1S = 0, VDS = 0) IG2SS - - 20 nAdc Gate 1 to source cutoff voltage (VDS = 15Vdc, VG2S = 4.0, ID = 200µAdc) VG1S(off) - - -4.0 Vdc Gate 2 to source cutoff voltage (VDS = 15Vdc, VG1S = 0, ID = 200µAdc) VG2S(off) - - -4.0 Vdc IDSS 3.0 10 30 mA Forward transfer admittance (gate 1 connected to drain) (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0kHz) |yfs| 10 - 20 mmhs Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Ciss - 4.5 7.0 pF Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Crss - 0.023 0.05 pF Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Coss - 2.5 4.0 pF Noise figure NF - 2.5 3.5 dB Common source power gain Gps 20 23 - dB - - 45 - mV GC 15 18.5 - dB ½ IFREJ - 50 - dB OFF CHARACTERISTICS ON CHARACTERISTICS Zero-gate voltage drain current (VDS = 15Vdc, VG2S = 0, VG2S = 4.0Vdc) SMALL SIGNAL CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Level of unwanted signal for 1.0% cross modulation Common-source conversion power gain(Gate 1 or Gate 2 injection) (Signal frequency = 100MHz, local oscillator frequency = 110.7MHz) ½ IF rejection 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120706 DIGITRON SEMICONDUCTORS MFE140 144 Market Street Kenilworth NJ 07033 USA DUAL GATE MOSFET FM AMPLIFIER phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120706 DIGITRON SEMICONDUCTORS MFE140 144 Market Street Kenilworth NJ 07033 USA DUAL GATE MOSFET FM AMPLIFIER phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120706 DIGITRON SEMICONDUCTORS MFE140 144 Market Street Kenilworth NJ 07033 USA DUAL GATE MOSFET FM AMPLIFIER phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120706 DIGITRON SEMICONDUCTORS MFE140 DUAL GATE MOSFET FM AMPLIFIER Dim A B C D E F G H J K L M N P TO-72 Inches Min 0.100 BSC 0.500 0.250 45°C BSC 0.050 BSC - Max 0.230 0.195 0.210 0.021 0.030 0.019 0.046 0.0480 - 0.050 Millimeters Min Max 5.840 4.950 5.330 0.530 0.760 0.480 2.540 BSC 1.170 1.220 12.700 6.350 45°C BSC 1.270 BSC 1.270 Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120706